| Mfr. No: | SSM6N16FUTE85LF |
| Mfr.: | Toshiba |
| Category: | MOSFETs |
| Description: | MOSFETs N-Ch Sm Sig FET 0.1A -0.1A 20V 2-in1 |
| Lifecycle: | Active |
| Datasheet: | SSM6N16FUTE85LF Datasheet (PDF) |
| Technology | MOSFET (Metal Oxide) |
| Configuration | 2 N-Channel (Dual) |
| FET Feature | - |
| Drain to Source Voltage (Vdss) | 20V |
| Current - Continuous Drain (Id) @ 25°C | 100mA |
| Rds On (Max) @ Id, Vgs | 3Ohm @ 10mA, 4V |
| Vgs(th) (Max) @ Id | 1.1V @ 100µA |
| Gate Charge (Qg) (Max) @ Vgs | - |
| Input Capacitance (Ciss) (Max) @ Vds | 9.3pF @ 3V |
| Power - Max | 200mW |
| Operating Temperature | 150°C (TJ) |
| Mounting Type | Surface Mount |
| Package / Case | 6-TSSOP, SC-88, SOT-363 |
| Supplier Device Package | US6 |
| Packaging | Reel |
| Standard Pack Qty | 3000 |
| Category | MOSFETs |
| RoHS | RoHS Compliant |
| Lifecycle | |
| Lead Time | 141 Days (from factory) |
| Country / Standard | Code |
|---|---|
| CNHTS | 8541210000 |
| CAHTS | 8541210000 |
| USHTS | 8541210095 |
| JPHTS | 8541210101 |
| TARIC | 8541100000 |
| MXHTS | 8541100101 |
| ECCN | EAR99 |
Toshiba manufactures the SSM6N16FUTE85LF, a mosfets part used in electronic assemblies. Its datasheet lists technology: MOSFET (Metal Oxide), configuration: 2 N-Channel (Dual), FET feature: -, drain to source voltage: 20V, current, continuous drain (id) @ 25°C: 100mA and rds on (max) @ id, vgs: 3Ohm @ 10mA, 4V. This part has a typical lead time of 141 Days from factory and ships with a full manufacturer datasheet available for download. You can source SSM6N16FUTE85LF through Simplytronix, with fast shipping and verified authenticity.