| Mfr. No: | SSM6N35FE,LM |
| Mfr.: | Toshiba |
| Category: | MOSFETs |
| Description: | MOSFETs Small Signal MOSFET |
| Lifecycle: | Active |
| Datasheet: | SSM6N35FE,LM Datasheet (PDF) |
| Technology | MOSFET (Metal Oxide) |
| Configuration | 2 N-Channel (Dual) |
| FET Feature | Logic Level Gate |
| Drain to Source Voltage (Vdss) | 20V |
| Current - Continuous Drain (Id) @ 25°C | 180mA |
| Rds On (Max) @ Id, Vgs | 3Ohm @ 50mA, 4V |
| Vgs(th) (Max) @ Id | 1V @ 1mA |
| Input Capacitance (Ciss) (Max) @ Vds | 9.5pF @ 3V |
| Power - Max | 150mW |
| Operating Temperature | 150°C (TJ) |
| Mounting Type | Surface Mount |
| Package / Case | SOT-563, SOT-666 |
| Supplier Device Package | ES6 |
| Packaging | Reel |
| Standard Pack Qty | 4000 |
| Category | MOSFETs |
| RoHS | RoHS Compliant |
| Lifecycle | |
| Lead Time | 23 Days (from factory) |
| Country / Standard | Code |
|---|---|
| CNHTS | 8541210000 |
| CAHTS | 8541210000 |
| USHTS | 8541210095 |
| JPHTS | 8541210101 |
| KRHTS | 8541219000 |
| TARIC | 8541210000 |
| MXHTS | 85412101 |
| ECCN | EAR99 |
Toshiba manufactures the SSM6N35FE,LM, a mosfets part used in electronic assemblies. It features technology: MOSFET (Metal Oxide), configuration: 2 N-Channel (Dual), FET feature: Logic Level Gate, drain to source voltage: 20V, current, continuous drain (id) @ 25°C: 180mA and rds on (max) @ id, vgs: 3Ohm @ 50mA, 4V. This part has a typical lead time of 23 Days from factory and ships with a full manufacturer datasheet available for download. You can source SSM6N35FE,LM through Simplytronix, with fast shipping and verified authenticity.