| Mfr. No: | SSM6N36FE,LM |
| Mfr.: | Toshiba |
| Category: | MOSFETs |
| Description: | MOSFETs 20V VDSS 10V VGSS N-Ch 150mW PD 1.5V |
| Lifecycle: | Active |
| Datasheet: | SSM6N36FE,LM Datasheet (PDF) |
| Technology | MOSFET (Metal Oxide) |
| Configuration | 2 N-Channel (Dual) |
| FET Feature | Logic Level Gate |
| Drain to Source Voltage (Vdss) | 20V |
| Current - Continuous Drain (Id) @ 25°C | 500mA |
| Rds On (Max) @ Id, Vgs | 630mOhm @ 200mA, 5V |
| Vgs(th) (Max) @ Id | 1V @ 1mA |
| Gate Charge (Qg) (Max) @ Vgs | 1.23nC @ 4V |
| Input Capacitance (Ciss) (Max) @ Vds | 46pF @ 10V |
| Power - Max | 150mW |
| Operating Temperature | 150°C (TJ) |
| Mounting Type | Surface Mount |
| Package / Case | SOT-563, SOT-666 |
| Supplier Device Package | ES6 |
| Packaging | Reel |
| Standard Pack Qty | 4000 |
| Category | MOSFETs |
| RoHS | RoHS Compliant |
| Lifecycle | |
| Lead Time | 123 Days (from factory) |
| Country / Standard | Code |
|---|---|
| CNHTS | 8541210000 |
| CAHTS | 8541210000 |
| USHTS | 8541210095 |
| JPHTS | 8541210101 |
| KRHTS | 8541219000 |
| TARIC | 8541210000 |
| ECCN | EAR99 |
SSM6N36FE,LM is a mosfets component manufactured by Toshiba. Notable characteristics of this part include technology: MOSFET (Metal Oxide), configuration: 2 N-Channel (Dual), FET feature: Logic Level Gate, drain to source voltage: 20V, current, continuous drain (id) @ 25°C: 500mA and rds on (max) @ id, vgs: 630mOhm @ 200mA, 5V. This part has a typical lead time of 123 Days from factory and ships with a full manufacturer datasheet available for download. Simplytronix offers SSM6N36FE,LM in stock, verified authentic and ready for same-day dispatch.