| Mfr. No: | SSM6N55NU,LF |
| Mfr.: | Toshiba |
| Category: | MOSFETs |
| Description: | MOSFETs 2N-Ch U-MOS VI FET ID 4A 30VDSS 4.5GD |
| Lifecycle: | Active |
| Datasheet: | SSM6N55NU,LF Datasheet (PDF) |
| Technology | MOSFET (Metal Oxide) |
| Configuration | 2 N-Channel (Dual) |
| FET Feature | Logic Level Gate |
| Drain to Source Voltage (Vdss) | 30V |
| Current - Continuous Drain (Id) @ 25°C | 4A |
| Rds On (Max) @ Id, Vgs | 46mOhm @ 4A, 10V |
| Vgs(th) (Max) @ Id | 2.5V @ 100µA |
| Gate Charge (Qg) (Max) @ Vgs | 2.5nC @ 4.5V |
| Input Capacitance (Ciss) (Max) @ Vds | 280pF @ 15V |
| Power - Max | 1W |
| Operating Temperature | 150°C (TJ) |
| Mounting Type | Surface Mount |
| Package / Case | 6-WDFN Exposed Pad |
| Supplier Device Package | 6-µDFN (2x2) |
| Packaging | Reel |
| Standard Pack Qty | 3000 |
| Category | MOSFETs |
| RoHS | RoHS Compliant |
| Lifecycle | |
| Lead Time | 0 Days (from factory) |
| Country / Standard | Code |
|---|---|
| CNHTS | 8541290000 |
| CAHTS | 8541290000 |
| USHTS | 8541290065 |
| JPHTS | 854129000 |
| KRHTS | 8541219000 |
| TARIC | 8541290000 |
| MXHTS | 8541299900 |
| ECCN | EAR99 |
Toshiba's SSM6N55NU,LF is a widely used mosfets part in electronic designs. Its datasheet lists technology: MOSFET (Metal Oxide), configuration: 2 N-Channel (Dual), FET feature: Logic Level Gate, drain to source voltage: 30V, current, continuous drain (id) @ 25°C: 4A and rds on (max) @ id, vgs: 46mOhm @ 4A, 10V. This part has a typical lead time of 0 Days from factory and ships with a full manufacturer datasheet available for download. Simplytronix supplies SSM6N55NU,LF with same-day shipping and guaranteed authenticity.