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SSM6N61NU,LF Toshiba
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SSM6N61NU,LF

Mfr. No: SSM6N61NU,LF
Mfr.: Toshiba
Category: MOSFETs
Description: MOSFETs Small-signal MOSFET 2 in 1 Nch ID: 4A
Lifecycle: Active
Datasheet: SSM6N61NU,LF Datasheet (PDF)
⚙ Specifications
Technology MOSFET (Metal Oxide)
Configuration 2 N-Channel (Dual)
FET Feature Logic Level Gate, 1.5V Drive
Drain to Source Voltage (Vdss) 20V
Current - Continuous Drain (Id) @ 25°C 4A
Rds On (Max) @ Id, Vgs 33mOhm @ 4A, 4.5V
Vgs(th) (Max) @ Id 1V @ 1mA
Gate Charge (Qg) (Max) @ Vgs 3.6nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds 410pF @ 10V
Power - Max 2W
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Package / Case 6-WDFN Exposed Pad
Supplier Device Package 6-UDFNB (2x2)
📦 Product Attributes
Packaging Reel
Standard Pack Qty 3000
🔁 Alternate / Replacement Parts
Alternate Packaging
Suggested Replacement
11,941
Units In Stock
📦 Reel
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🔑 Key Specifications
Category MOSFETs
RoHS RoHS Compliant
Lifecycle
Lead Time 0 Days (from factory)
📄 Documentation
⬇ Download Datasheet
🌐 Compliance & Export
Country / Standard Code
CNHTS 8541290000
CAHTS 8541100090
USHTS 8541290065
JPHTS 854110090
KRHTS 8541109000
TARIC 8541100000
MXHTS 8541100101
ECCN EAR99
ℹ Product Overview

Toshiba manufactures the SSM6N61NU,LF, a mosfets part used in electronic assemblies. Technical specifications for this part include technology: MOSFET (Metal Oxide), configuration: 2 N-Channel (Dual), FET feature: Logic Level Gate, 1.5V Drive, drain to source voltage: 20V, current, continuous drain (id) @ 25°C: 4A and rds on (max) @ id, vgs: 33mOhm @ 4A, 4.5V. This part has a typical lead time of 0 Days from factory and ships with a full manufacturer datasheet available for download. You can source SSM6N61NU,LF through Simplytronix, with fast shipping and verified authenticity.

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