*For representation only.
SSM6N7002BFE,LM
| Mfr. No: | SSM6N7002BFE,LM |
| Mfr.: | Toshiba |
| Category: | MOSFETs |
| Description: | MOSFETs ES6 S-MOS TRSTR Pd: 0.15W F: 1MHz |
| Datasheet: | SSM6N7002BFE,LM Datasheet (PDF) |
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Specifications
| Technology | MOSFET (Metal Oxide) |
| Configuration | 2 N-Channel (Dual) |
| FET Feature | Logic Level Gate |
| Drain to Source Voltage (Vdss) | 60V |
| Current - Continuous Drain (Id) @ 25°C | 200mA |
| Rds On (Max) @ Id, Vgs | 2.1Ohm @ 500mA, 10V |
| Vgs(th) (Max) @ Id | 3.1V @ 250µA |
| Gate Charge (Qg) (Max) @ Vgs | - |
| Input Capacitance (Ciss) (Max) @ Vds | 17pF @ 25V |
| Power - Max | 150mW |
| Operating Temperature | 150°C (TJ) |
| Mounting Type | Surface Mount |
| Package / Case | SOT-563, SOT-666 |
| Supplier Device Package | ES6 |
📦
Product Attributes
| Packaging | Reel |
| Standard Pack Qty | 4000 |
12,017
Units In Stock
📦 Reel
- 24-hour response
- Global shipping
- Genuine parts guaranteed
Test report available upon request —
view sample report
🔑
Key Specifications
| Category | MOSFETs |
| RoHS | RoHS Compliant |
| Lifecycle | |
| Lead Time | 127 Days (from factory) |
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Documentation
⬇ Download Datasheet
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Compliance & Export
| Country / Standard | Code |
|---|---|
| CNHTS | 8541210000 |
| CAHTS | 8541210000 |
| USHTS | 8541210095 |
| JPHTS | 8541210101 |
| KRHTS | 8541219000 |
| TARIC | 8541210000 |
| MXHTS | 85412101 |
| ECCN | EAR99 |
ℹ
Product Overview
The SSM6N7002BFE,LM from Toshiba falls under the mosfets category. Notable characteristics of this part include technology: MOSFET (Metal Oxide), configuration: 2 N-Channel (Dual), FET feature: Logic Level Gate, drain to source voltage: 60V, current, continuous drain (id) @ 25°C: 200mA and rds on (max) @ id, vgs: 2.1Ohm @ 500mA, 10V. This part has a typical lead time of 127 Days from factory and ships with a full manufacturer datasheet available for download. SSM6N7002BFE,LM is available through Simplytronix, sourced and verified for authenticity.
