| Mfr. No: | SSM6N815R,LF |
| Mfr.: | Toshiba |
| Category: | MOSFETs |
| Description: | MOSFETs LowON Res MOSFET ID=2A VDSS=100V |
| Datasheet: | SSM6N815R,LF Datasheet (PDF) |
| Technology | MOSFET (Metal Oxide) |
| Configuration | 2 N-Channel (Dual) |
| FET Feature | Logic Level Gate, 4V Drive |
| Drain to Source Voltage (Vdss) | 100V |
| Current - Continuous Drain (Id) @ 25°C | 2A (Ta) |
| Rds On (Max) @ Id, Vgs | 103mOhm @ 2A, 10V |
| Vgs(th) (Max) @ Id | 2.5V @ 100µA |
| Gate Charge (Qg) (Max) @ Vgs | 3.1nC @ 4.5V |
| Input Capacitance (Ciss) (Max) @ Vds | 290pF @ 15V |
| Power - Max | 1.8W (Ta) |
| Operating Temperature | 150°C |
| Mounting Type | Surface Mount |
| Package / Case | 6-SMD, Flat Leads |
| Supplier Device Package | 6-TSOP-F |
| Packaging | Reel |
| Standard Pack Qty | 3000 |
| Category | MOSFETs |
| RoHS | RoHS Compliant |
| Lifecycle | |
| Lead Time | 154 Days (from factory) |
| Country / Standard | Code |
|---|---|
| CNHTS | 8541290000 |
| CAHTS | 8541290000 |
| USHTS | 8541290065 |
| JPHTS | 8541290100 |
| TARIC | 8541290000 |
| MXHTS | 85412999 |
| ECCN | EAR99 |
The SSM6N815R,LF, made by Toshiba, belongs to the mosfets product category. It features technology: MOSFET (Metal Oxide), configuration: 2 N-Channel (Dual), FET feature: Logic Level Gate, 4V Drive, drain to source voltage: 100V, current, continuous drain (id) @ 25°C: 2A (Ta) and rds on (max) @ id, vgs: 103mOhm @ 2A, 10V. This part has a typical lead time of 154 Days from factory and ships with a full manufacturer datasheet available for download. Simplytronix stocks SSM6N815R,LF for same-day shipping with genuine parts guaranteed.