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TJ15P04M3,RQ(S Toshiba
*For representation only.

TJ15P04M3,RQ(S

Mfr. No: TJ15P04M3,RQ(S
Mfr.: Toshiba
Category: MOSFETs
Description: MOSFETs P-Ch MOS 1100 pF 29W PD -15A -40V
Lifecycle: Active
Datasheet: TJ15P04M3,RQ(S Datasheet (PDF)
⚙ Specifications
FET Type P-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 40 V
Current - Continuous Drain (Id) @ 25°C 15A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Rds On (Max) @ Id, Vgs 36mOhm @ 7.5A, 10V
Vgs(th) (Max) @ Id 2V @ 100µA
Gate Charge (Qg) (Max) @ Vgs 26 nC @ 10 V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 1100 pF @ 10 V
FET Feature -
Power Dissipation (Max) 29W (Tc)
Operating Temperature 150°C (TJ)
Grade -
Qualification -
Mounting Type Surface Mount
Supplier Device Package DPAK
Package / Case TO-252-3, DPAK (2 Leads + Tab), SC-63
📦 Product Attributes
Packaging Reel
Standard Pack Qty 2000
🔁 Alternate / Replacement Parts
Alternate Packaging
Suggested Replacement
14,585
Units In Stock
📦 Reel
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🔑 Key Specifications
Category MOSFETs
RoHS RoHS Compliant
Lifecycle
Lead Time 79 Days (from factory)
📄 Documentation
⬇ Download Datasheet
🌐 Compliance & Export
Country / Standard Code
CNHTS 8541290000
CAHTS 8541290000
USHTS 8541290065
JPHTS 8541290100
TARIC 8542399000
MXHTS 8542399901
ECCN EAR99
ℹ Product Overview

As a mosfets component, the TJ15P04M3,RQ(S is manufactured and supplied by Toshiba. Its datasheet lists FET type: P-Channel, technology: MOSFET (Metal Oxide), drain to source voltage: 40 V, current, continuous drain (id) @ 25°C: 15A (Ta), drive voltage: 4.5V, 10V and rds on (max) @ id, vgs: 36mOhm @ 7.5A, 10V. This part has a typical lead time of 79 Days from factory and ships with a full manufacturer datasheet available for download. Simplytronix carries TJ15P04M3,RQ(S in stock, backed by a genuine parts guarantee and quick dispatch.

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