| Mfr. No: | TJ15P04M3,RQ(S |
| Mfr.: | Toshiba |
| Category: | MOSFETs |
| Description: | MOSFETs P-Ch MOS 1100 pF 29W PD -15A -40V |
| Lifecycle: | Active |
| Datasheet: | TJ15P04M3,RQ(S Datasheet (PDF) |
| FET Type | P-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 40 V |
| Current - Continuous Drain (Id) @ 25°C | 15A (Ta) |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Rds On (Max) @ Id, Vgs | 36mOhm @ 7.5A, 10V |
| Vgs(th) (Max) @ Id | 2V @ 100µA |
| Gate Charge (Qg) (Max) @ Vgs | 26 nC @ 10 V |
| Vgs (Max) | ±20V |
| Input Capacitance (Ciss) (Max) @ Vds | 1100 pF @ 10 V |
| FET Feature | - |
| Power Dissipation (Max) | 29W (Tc) |
| Operating Temperature | 150°C (TJ) |
| Grade | - |
| Qualification | - |
| Mounting Type | Surface Mount |
| Supplier Device Package | DPAK |
| Package / Case | TO-252-3, DPAK (2 Leads + Tab), SC-63 |
| Packaging | Reel |
| Standard Pack Qty | 2000 |
| Category | MOSFETs |
| RoHS | RoHS Compliant |
| Lifecycle | |
| Lead Time | 79 Days (from factory) |
| Country / Standard | Code |
|---|---|
| CNHTS | 8541290000 |
| CAHTS | 8541290000 |
| USHTS | 8541290065 |
| JPHTS | 8541290100 |
| TARIC | 8542399000 |
| MXHTS | 8542399901 |
| ECCN | EAR99 |
As a mosfets component, the TJ15P04M3,RQ(S is manufactured and supplied by Toshiba. Its datasheet lists FET type: P-Channel, technology: MOSFET (Metal Oxide), drain to source voltage: 40 V, current, continuous drain (id) @ 25°C: 15A (Ta), drive voltage: 4.5V, 10V and rds on (max) @ id, vgs: 36mOhm @ 7.5A, 10V. This part has a typical lead time of 79 Days from factory and ships with a full manufacturer datasheet available for download. Simplytronix carries TJ15P04M3,RQ(S in stock, backed by a genuine parts guarantee and quick dispatch.