*For representation only.
TJ200F04M3L,LXHQ
| Mfr. No: | TJ200F04M3L,LXHQ |
| Mfr.: | Toshiba |
| Category: | MOSFETs |
| Description: | MOSFETs 375W 1MHz Automotive; AEC-Q101 |
| Datasheet: | TJ200F04M3L,LXHQ Datasheet (PDF) |
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Specifications
| FET Type | P-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 40 V |
| Current - Continuous Drain (Id) @ 25°C | 200A (Ta) |
| Drive Voltage (Max Rds On, Min Rds On) | 6V, 10V |
| Rds On (Max) @ Id, Vgs | 1.8mOhm @ 100A, 10V |
| Vgs(th) (Max) @ Id | 3V @ 1mA |
| Gate Charge (Qg) (Max) @ Vgs | 460 nC @ 10 V |
| Vgs (Max) | +10V, -20V |
| Input Capacitance (Ciss) (Max) @ Vds | 1280 pF @ 10 V |
| FET Feature | - |
| Power Dissipation (Max) | 375W (Tc) |
| Operating Temperature | 175°C |
| Grade | Automotive |
| Qualification | AEC-Q101 |
| Mounting Type | Surface Mount |
| Supplier Device Package | TO-220SM(W) |
| Package / Case | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB |
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Product Attributes
| Packaging | Reel |
| Standard Pack Qty | 1000 |
14,029
Units In Stock
📦 Reel
- 24-hour response
- Global shipping
- Genuine parts guaranteed
Test report available upon request —
view sample report
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Key Specifications
| Category | MOSFETs |
| RoHS | RoHS Compliant |
| Lifecycle | |
| Lead Time | 1 Days (from factory) |
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Documentation
⬇ Download Datasheet
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Compliance & Export
| Country / Standard | Code |
|---|---|
| CNHTS | 8541290000 |
| USHTS | 8541290065 |
| TARIC | 8541290000 |
| ECCN | EAR99 |
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Product Overview
Manufactured by Toshiba, the TJ200F04M3L,LXHQ is classified under mosfets. It features FET type: P-Channel, technology: MOSFET (Metal Oxide), drain to source voltage: 40 V, current, continuous drain (id) @ 25°C: 200A (Ta), drive voltage: 6V, 10V and rds on (max) @ id, vgs: 1.8mOhm @ 100A, 10V. This part has a typical lead time of 1 Days from factory and ships with a full manufacturer datasheet available for download. Get TJ200F04M3L,LXHQ from Simplytronix, shipped same day with a genuine parts guarantee.
