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TK160F10N1L,LXGQ Toshiba
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TK160F10N1L,LXGQ

Mfr. No: TK160F10N1L,LXGQ
Mfr.: Toshiba
Category: MOSFETs
Description: MOSFETs PD=375W F=1MHZ AEC-Q101
Datasheet: TK160F10N1L,LXGQ Datasheet (PDF)
⚙ Specifications
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 100 V
Current - Continuous Drain (Id) @ 25°C 160A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 6V, 10V
Rds On (Max) @ Id, Vgs 2.4mOhm @ 80A, 10V
Vgs(th) (Max) @ Id 3.5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs 122 nC @ 10 V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 10100 pF @ 10 V
FET Feature -
Power Dissipation (Max) 375W (Tc)
Operating Temperature 175°C
Grade Automotive
Qualification AEC-Q101
Mounting Type Surface Mount
Supplier Device Package TO-220SM(W)
Package / Case TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
📦 Product Attributes
Packaging Reel
Standard Pack Qty 1000
🔁 Alternate / Replacement Parts
Alternate Packaging
Suggested Replacement
5,095
Units In Stock
📦 Reel
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🔑 Key Specifications
Category MOSFETs
RoHS RoHS Compliant
Lifecycle
Lead Time 0 Days (from factory)
📄 Documentation
⬇ Download Datasheet
🌐 Compliance & Export
Country / Standard Code
CNHTS 8541290000
USHTS 8541290065
TARIC 8541290000
ECCN EAR99
ℹ Product Overview

Toshiba manufactures the TK160F10N1L,LXGQ, a mosfets part used in electronic assemblies. Technical specifications for this part include FET type: N-Channel, technology: MOSFET (Metal Oxide), drain to source voltage: 100 V, current, continuous drain (id) @ 25°C: 160A (Ta), drive voltage: 6V, 10V and rds on (max) @ id, vgs: 2.4mOhm @ 80A, 10V. This part has a typical lead time of 0 Days from factory and ships with a full manufacturer datasheet available for download. You can source TK160F10N1L,LXGQ through Simplytronix, with fast shipping and verified authenticity.

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