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TK16G60W5,RVQ Toshiba
*For representation only.

TK16G60W5,RVQ

Mfr. No: TK16G60W5,RVQ
Mfr.: Toshiba
Category: MOSFETs
Description: MOSFETs Pb-F POWER MOSFET TRANSISTOR DPAK(OS) PD=130W F=1MHZ
Datasheet: TK16G60W5,RVQ Datasheet (PDF)
⚙ Specifications
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 600 V
Current - Continuous Drain (Id) @ 25°C 15.8A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 230mOhm @ 7.9A, 10V
Vgs(th) (Max) @ Id 4.5V @ 790µA
Gate Charge (Qg) (Max) @ Vgs 43 nC @ 10 V
Vgs (Max) ±30V
Input Capacitance (Ciss) (Max) @ Vds 1350 pF @ 300 V
FET Feature -
Power Dissipation (Max) 130W (Tc)
Operating Temperature 150°C
Grade -
Qualification -
Mounting Type Surface Mount
Supplier Device Package D2PAK
Package / Case TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
📦 Product Attributes
Packaging Reel
Standard Pack Qty 1000
🔁 Alternate / Replacement Parts
Alternate Packaging
Suggested Replacement
5,773
Units In Stock
📦 Reel
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🔑 Key Specifications
Category MOSFETs
RoHS RoHS Compliant
Lifecycle
Lead Time 0 Days (from factory)
📄 Documentation
⬇ Download Datasheet
🌐 Compliance & Export
Country / Standard Code
CNHTS 8541290000
CAHTS 8541290000
USHTS 8541290065
JPHTS 854129000
TARIC 8541290000
MXHTS 8541299900
ECCN EAR99
ℹ Product Overview

The TK16G60W5,RVQ, made by Toshiba, belongs to the mosfets product category. Among its key specs are FET type: N-Channel, technology: MOSFET (Metal Oxide), drain to source voltage: 600 V, current, continuous drain (id) @ 25°C: 15.8A (Ta), drive voltage: 10V and rds on (max) @ id, vgs: 230mOhm @ 7.9A, 10V. This part has a typical lead time of 0 Days from factory and ships with a full manufacturer datasheet available for download. Simplytronix stocks TK16G60W5,RVQ for same-day shipping with genuine parts guaranteed.

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