| Mfr. No: | TK2K2A60F,S4X |
| Mfr.: | Toshiba |
| Category: | MOSFETs |
| Description: | MOSFETs TO-220SIS PD=30W 1MHz PWR MOSFET TRNS |
| Lifecycle: | Active |
| Datasheet: | TK2K2A60F,S4X Datasheet (PDF) |
| FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 600 V |
| Current - Continuous Drain (Id) @ 25°C | 3.5A (Ta) |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Rds On (Max) @ Id, Vgs | 2.2Ohm @ 1.8A, 10V |
| Vgs(th) (Max) @ Id | 4V @ 350µA |
| Gate Charge (Qg) (Max) @ Vgs | 13 nC @ 10 V |
| Vgs (Max) | ±30V |
| Input Capacitance (Ciss) (Max) @ Vds | 450 pF @ 300 V |
| Power Dissipation (Max) | 30W (Tc) |
| Operating Temperature | 150°C |
| Mounting Type | Through Hole |
| Supplier Device Package | TO-220SIS |
| Package / Case | TO-220-3 Full Pack |
| Packaging | Tube |
| Standard Pack Qty | 50 |
| Category | MOSFETs |
| RoHS | RoHS Compliant |
| Lifecycle | |
| Lead Time | 65 Days (from factory) |
| Country / Standard | Code |
|---|---|
| CNHTS | 8541290000 |
| USHTS | 8541290065 |
| TARIC | 8541290000 |
| ECCN | EAR99 |
Toshiba manufactures the TK2K2A60F,S4X, a mosfets part used in electronic assemblies. This component is defined by FET type: N-Channel, technology: MOSFET (Metal Oxide), drain to source voltage: 600 V, current, continuous drain (id) @ 25°C: 3.5A (Ta), drive voltage: 10V and rds on (max) @ id, vgs: 2.2Ohm @ 1.8A, 10V. This part has a typical lead time of 65 Days from factory and ships with a full manufacturer datasheet available for download. You can source TK2K2A60F,S4X through Simplytronix, with fast shipping and verified authenticity.