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TK33S10N1Z,LXHQ Toshiba
*For representation only.

TK33S10N1Z,LXHQ

Mfr. No: TK33S10N1Z,LXHQ
Mfr.: Toshiba
Category: MOSFETs
Description: MOSFETs 125W 1MHz Automotive; AEC-Q101
Lifecycle: Active
Datasheet: TK33S10N1Z,LXHQ Datasheet (PDF)
⚙ Specifications
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 100 V
Current - Continuous Drain (Id) @ 25°C 33A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 9.7mOhm @ 16.5A, 10V
Vgs(th) (Max) @ Id 4V @ 500µA
Gate Charge (Qg) (Max) @ Vgs 28 nC @ 10 V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 2050 pF @ 10 V
FET Feature -
Power Dissipation (Max) 125W (Tc)
Operating Temperature 175°C
Grade Automotive
Qualification AEC-Q101
Mounting Type Surface Mount
Supplier Device Package DPAK+
Package / Case TO-252-3, DPAK (2 Leads + Tab), SC-63
📦 Product Attributes
Packaging Reel
Standard Pack Qty 2000
🔁 Alternate / Replacement Parts
Alternate Packaging
Suggested Replacement
6,148
Units In Stock
📦 Reel
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🔑 Key Specifications
Category MOSFETs
RoHS RoHS Compliant
Lifecycle
Lead Time 64 Days (from factory)
📄 Documentation
⬇ Download Datasheet
🌐 Compliance & Export
Country / Standard Code
CNHTS 8541290000
USHTS 8541290065
TARIC 8541290000
ECCN EAR99
ℹ Product Overview

As a mosfets component, the TK33S10N1Z,LXHQ is manufactured and supplied by Toshiba. This component is defined by FET type: N-Channel, technology: MOSFET (Metal Oxide), drain to source voltage: 100 V, current, continuous drain (id) @ 25°C: 33A (Ta), drive voltage: 10V and rds on (max) @ id, vgs: 9.7mOhm @ 16.5A, 10V. This part has a typical lead time of 64 Days from factory and ships with a full manufacturer datasheet available for download. Simplytronix carries TK33S10N1Z,LXHQ in stock, backed by a genuine parts guarantee and quick dispatch.

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