| Mfr. No: | TK9J90E,S1E |
| Mfr.: | Toshiba |
| Category: | MOSFETs |
| Description: | MOSFETs PLN MOS 900V 1300m (VGS=10V) TO-3PN |
| Datasheet: | TK9J90E,S1E Datasheet (PDF) |
| FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 900 V |
| Current - Continuous Drain (Id) @ 25°C | 9A (Ta) |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Rds On (Max) @ Id, Vgs | 1.3Ohm @ 4.5A, 10V |
| Vgs(th) (Max) @ Id | 4V @ 900µA |
| Gate Charge (Qg) (Max) @ Vgs | 46 nC @ 10 V |
| Vgs (Max) | ±30V |
| Input Capacitance (Ciss) (Max) @ Vds | 2000 pF @ 25 V |
| FET Feature | - |
| Power Dissipation (Max) | 250W (Tc) |
| Operating Temperature | 150°C (TJ) |
| Grade | - |
| Qualification | - |
| Mounting Type | Through Hole |
| Supplier Device Package | TO-3P(N) |
| Package / Case | TO-3P-3, SC-65-3 |
| Packaging | Tray |
| Standard Pack Qty | 25 |
| Category | MOSFETs |
| RoHS | RoHS Compliant |
| Lifecycle | |
| Lead Time | 57 Days (from factory) |
| Country / Standard | Code |
|---|---|
| CNHTS | 8541290000 |
| CAHTS | 8541290000 |
| USHTS | 8541290065 |
| JPHTS | 8541290100 |
| KRHTS | 8541299000 |
| TARIC | 8541290000 |
| MXHTS | 85412999 |
| ECCN | EAR99 |
As a mosfets component, the TK9J90E,S1E is manufactured and supplied by Toshiba. Key specifications include FET type: N-Channel, technology: MOSFET (Metal Oxide), drain to source voltage: 900 V, current, continuous drain (id) @ 25°C: 9A (Ta), drive voltage: 10V and rds on (max) @ id, vgs: 1.3Ohm @ 4.5A, 10V. This part has a typical lead time of 57 Days from factory and ships with a full manufacturer datasheet available for download. Simplytronix carries TK9J90E,S1E in stock, backed by a genuine parts guarantee and quick dispatch.