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TK9J90E,S1E Toshiba
*For representation only.

TK9J90E,S1E

Mfr. No: TK9J90E,S1E
Mfr.: Toshiba
Category: MOSFETs
Description: MOSFETs PLN MOS 900V 1300m (VGS=10V) TO-3PN
Datasheet: TK9J90E,S1E Datasheet (PDF)
⚙ Specifications
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 900 V
Current - Continuous Drain (Id) @ 25°C 9A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 1.3Ohm @ 4.5A, 10V
Vgs(th) (Max) @ Id 4V @ 900µA
Gate Charge (Qg) (Max) @ Vgs 46 nC @ 10 V
Vgs (Max) ±30V
Input Capacitance (Ciss) (Max) @ Vds 2000 pF @ 25 V
FET Feature -
Power Dissipation (Max) 250W (Tc)
Operating Temperature 150°C (TJ)
Grade -
Qualification -
Mounting Type Through Hole
Supplier Device Package TO-3P(N)
Package / Case TO-3P-3, SC-65-3
📦 Product Attributes
Packaging Tray
Standard Pack Qty 25
🔁 Alternate / Replacement Parts
Alternate Packaging
Suggested Replacement
5,383
Units In Stock
📦 Tray
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🔑 Key Specifications
Category MOSFETs
RoHS RoHS Compliant
Lifecycle
Lead Time 57 Days (from factory)
📄 Documentation
⬇ Download Datasheet
🌐 Compliance & Export
Country / Standard Code
CNHTS 8541290000
CAHTS 8541290000
USHTS 8541290065
JPHTS 8541290100
KRHTS 8541299000
TARIC 8541290000
MXHTS 85412999
ECCN EAR99
ℹ Product Overview

As a mosfets component, the TK9J90E,S1E is manufactured and supplied by Toshiba. Key specifications include FET type: N-Channel, technology: MOSFET (Metal Oxide), drain to source voltage: 900 V, current, continuous drain (id) @ 25°C: 9A (Ta), drive voltage: 10V and rds on (max) @ id, vgs: 1.3Ohm @ 4.5A, 10V. This part has a typical lead time of 57 Days from factory and ships with a full manufacturer datasheet available for download. Simplytronix carries TK9J90E,S1E in stock, backed by a genuine parts guarantee and quick dispatch.

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