| Mfr. No: | TMBT3906,LM |
| Mfr.: | Toshiba |
| Category: | Bipolar Transistors - BJT |
| Description: | Bipolar Transistors - BJT Transistor for Low Freq. Amplification |
| Lifecycle: | Active |
| Datasheet: | TMBT3906,LM Datasheet (PDF) |
| Transistor Type | PNP |
| Current - Collector (Ic) (Max) | 150 mA |
| Voltage - Collector Emitter Breakdown (Max) | 50 V |
| Vce Saturation (Max) @ Ib, Ic | 400mV @ 5mA, 50mA |
| Current - Collector Cutoff (Max) | 100nA (ICBO) |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 100 @ 10mA, 1V |
| Power - Max | 320 mW |
| Frequency - Transition | 250MHz |
| Operating Temperature | 150°C (TJ) |
| Mounting Type | Surface Mount |
| Package / Case | TO-236-3, SC-59, SOT-23-3 |
| Supplier Device Package | SOT-23-3 |
| Packaging | Reel |
| Standard Pack Qty | 3000 |
| Category | Bipolar Transistors - BJT |
| RoHS | RoHS Compliant |
| Lifecycle | |
| Lead Time | 98 Days (from factory) |
| Country / Standard | Code |
|---|---|
| CNHTS | 8541210000 |
| CAHTS | 8541290000 |
| USHTS | 8541290055 |
| JPHTS | 854129000 |
| KRHTS | 8541299000 |
| TARIC | 8541290000 |
| MXHTS | 8541299900 |
| ECCN | EAR99 |
Manufactured by Toshiba, the TMBT3906,LM is classified under transistors. This part is specified with transistor type: PNP, current, collector (ic): 150 mA, voltage, collector emitter breakdown: 50 V, vce saturation (max) @ ib, ic: 400mV @ 5mA, 50mA, current, collector cutoff: 100nA (ICBO) and DC current gain (hfe) (min) @ ic, vce: 100 @ 10mA, 1V. This part has a typical lead time of 98 Days from factory and ships with a full manufacturer datasheet available for download. Get TMBT3906,LM from Simplytronix, shipped same day with a genuine parts guarantee.