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TPC8132,LQ(S Toshiba
*For representation only.

TPC8132,LQ(S

Mfr. No: TPC8132,LQ(S
Mfr.: Toshiba
Category: MOSFETs
Description: MOSFETs N-Ch -30V FET 1650pF -7A 1.9W
Lifecycle: Active
Datasheet: TPC8132,LQ(S Datasheet (PDF)
⚙ Specifications
FET Type P-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 40 V
Current - Continuous Drain (Id) @ 25°C 7A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Rds On (Max) @ Id, Vgs 25mOhm @ 3.5A, 10V
Vgs(th) (Max) @ Id 2V @ 200µA
Gate Charge (Qg) (Max) @ Vgs 34 nC @ 10 V
Vgs (Max) +20V, -25V
Input Capacitance (Ciss) (Max) @ Vds 1580 pF @ 10 V
FET Feature -
Power Dissipation (Max) 1W (Ta)
Operating Temperature 150°C (TJ)
Grade -
Qualification -
Mounting Type Surface Mount
Supplier Device Package 8-SOP
Package / Case 8-SOIC (0.154", 3.90mm Width)
📦 Product Attributes
Packaging Reel
Standard Pack Qty 2500
🔁 Alternate / Replacement Parts
Alternate Packaging
Suggested Replacement
11,001
Units In Stock
📦 Reel
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🔑 Key Specifications
Category MOSFETs
RoHS RoHS Compliant
Lifecycle
Lead Time 0 Days (from factory)
📄 Documentation
⬇ Download Datasheet
🌐 Compliance & Export
Country / Standard Code
CNHTS 8541290000
CAHTS 8541290000
USHTS 8541290065
JPHTS 8541290100
KRHTS 8541299000
TARIC 8541290000
MXHTS 85412999
ECCN EAR99
ℹ Product Overview

Toshiba manufactures the TPC8132,LQ(S, a mosfets part used in electronic assemblies. Notable characteristics of this part include FET type: P-Channel, technology: MOSFET (Metal Oxide), drain to source voltage: 40 V, current, continuous drain (id) @ 25°C: 7A (Ta), drive voltage: 4.5V, 10V and rds on (max) @ id, vgs: 25mOhm @ 3.5A, 10V. This part has a typical lead time of 0 Days from factory and ships with a full manufacturer datasheet available for download. You can source TPC8132,LQ(S through Simplytronix, with fast shipping and verified authenticity.

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