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TPH1R005PL,L1Q Toshiba
*For representation only.

TPH1R005PL,L1Q

Mfr. No: TPH1R005PL,L1Q
Mfr.: Toshiba
Category: MOSFETs
Description: MOSFETs POWER MOSFET TRANSISTOR PD=170W
Lifecycle: Active
Datasheet: TPH1R005PL,L1Q Datasheet (PDF)
⚙ Specifications
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 45 V
Current - Continuous Drain (Id) @ 25°C 150A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Rds On (Max) @ Id, Vgs 1.04mOhm @ 50A, 10V
Vgs(th) (Max) @ Id 2.4V @ 1mA
Gate Charge (Qg) (Max) @ Vgs 99 nC @ 10 V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 9600 pF @ 22.5 V
FET Feature -
Power Dissipation (Max) 960mW (Ta), 170W (Tc)
Operating Temperature 175°C (TJ)
Grade -
Qualification -
Mounting Type Surface Mount
Supplier Device Package 8-SOP Advance (5x5)
Package / Case 8-PowerVDFN
📦 Product Attributes
Packaging Reel
Standard Pack Qty 5000
🔁 Alternate / Replacement Parts
Alternate Packaging
Suggested Replacement
5,679
Units In Stock
📦 Reel
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🔑 Key Specifications
Category MOSFETs
RoHS RoHS Compliant
Lifecycle
Lead Time 0 Days (from factory)
📄 Documentation
⬇ Download Datasheet
🌐 Compliance & Export
Country / Standard Code
CNHTS 8541290000
CAHTS 8541290000
USHTS 8541290065
JPHTS 854129000
KRHTS 8541299000
TARIC 8541290000
MXHTS 8541299900
ECCN EAR99
ℹ Product Overview

Toshiba manufactures the TPH1R005PL,L1Q, a mosfets part used in electronic assemblies. This part is specified with FET type: N-Channel, technology: MOSFET (Metal Oxide), drain to source voltage: 45 V, current, continuous drain (id) @ 25°C: 150A (Tc), drive voltage: 4.5V, 10V and rds on (max) @ id, vgs: 1.04mOhm @ 50A, 10V. This part has a typical lead time of 0 Days from factory and ships with a full manufacturer datasheet available for download. You can source TPH1R005PL,L1Q through Simplytronix, with fast shipping and verified authenticity.

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