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TPHR9003NL,L1Q Toshiba
*For representation only.

TPHR9003NL,L1Q

Mfr. No: TPHR9003NL,L1Q
Mfr.: Toshiba
Category: MOSFETs
Description: MOSFETs X35PBF Power MOSFET Trans VGS4.5VVDS30V
Lifecycle: Active
⚙ Specifications
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 30 V
Current - Continuous Drain (Id) @ 25°C 60A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Rds On (Max) @ Id, Vgs 0.9mOhm @ 30A, 10V
Vgs(th) (Max) @ Id 2.3V @ 1mA
Gate Charge (Qg) (Max) @ Vgs 74 nC @ 10 V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 6900 pF @ 15 V
Power Dissipation (Max) 1.6W (Ta), 78W (Tc)
Operating Temperature 150°C (TJ)
Mounting Type Surface Mount
Supplier Device Package 8-SOP Advance (5x5)
Package / Case 8-PowerVDFN
📦 Product Attributes
Packaging Reel
Standard Pack Qty 5000
🔁 Alternate / Replacement Parts
Alternate Packaging
Suggested Replacement
8,197
Units In Stock
📦 Reel
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🔑 Key Specifications
Category MOSFETs
RoHS RoHS Compliant
Lifecycle
Lead Time 126 Days (from factory)
📄 Documentation
Datasheet not available
🌐 Compliance & Export
Country / Standard Code
CNHTS 8541290000
CAHTS 8541290000
USHTS 8541290065
JPHTS 8541290100
KRHTS 8541299000
TARIC 8541290000
MXHTS 85412999
ECCN EAR99
ℹ Product Overview

TPHR9003NL,L1Q is a mosfets part produced by Toshiba for use across a range of applications. Technical specifications for this part include FET type: N-Channel, technology: MOSFET (Metal Oxide), drain to source voltage: 30 V, current, continuous drain (id) @ 25°C: 60A (Tc), drive voltage: 4.5V, 10V and rds on (max) @ id, vgs: 0.9mOhm @ 30A, 10V. This part has a typical lead time of 126 Days from factory. Order TPHR9003NL,L1Q from Simplytronix for authenticated stock and same-day order processing.

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