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TPN3300ANH,LQ Toshiba
*For representation only.

TPN3300ANH,LQ

Mfr. No: TPN3300ANH,LQ
Mfr.: Toshiba
Category: MOSFETs
Description: MOSFETs N-Ch 100V 21A 27W UMOSVIII 680pF 11nC
Lifecycle: Active
Datasheet: TPN3300ANH,LQ Datasheet (PDF)
⚙ Specifications
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 100 V
Current - Continuous Drain (Id) @ 25°C 9.4A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 33mOhm @ 4.7A, 10V
Vgs(th) (Max) @ Id 4V @ 100µA
Gate Charge (Qg) (Max) @ Vgs 11 nC @ 10 V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 880 pF @ 50 V
FET Feature -
Power Dissipation (Max) 700mW (Ta), 27W (Tc)
Operating Temperature 150°C (TJ)
Grade -
Qualification -
Mounting Type Surface Mount
Supplier Device Package 8-TSON Advance (3.3x3.3)
Package / Case 8-PowerVDFN
📦 Product Attributes
Packaging Reel
Standard Pack Qty 3000
🔁 Alternate / Replacement Parts
Alternate Packaging
Suggested Replacement
8,617
Units In Stock
📦 Reel
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🔑 Key Specifications
Category MOSFETs
RoHS RoHS Compliant
Lifecycle
Lead Time 0 Days (from factory)
📄 Documentation
⬇ Download Datasheet
🌐 Compliance & Export
Country / Standard Code
CNHTS 8541290000
CAHTS 8541290000
USHTS 8541290065
JPHTS 8541290100
KRHTS 8541299000
TARIC 8541290000
MXHTS 85412999
ECCN EAR99
ℹ Product Overview

The TPN3300ANH,LQ from Toshiba falls under the mosfets category. Notable characteristics of this part include FET type: N-Channel, technology: MOSFET (Metal Oxide), drain to source voltage: 100 V, current, continuous drain (id) @ 25°C: 9.4A (Tc), drive voltage: 10V and rds on (max) @ id, vgs: 33mOhm @ 4.7A, 10V. This part has a typical lead time of 0 Days from factory and ships with a full manufacturer datasheet available for download. TPN3300ANH,LQ is available through Simplytronix, sourced and verified for authenticity.

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