*For representation only.
TPW2900ENH,L1Q
| Mfr. No: | TPW2900ENH,L1Q |
| Mfr.: | Toshiba |
| Category: | MOSFETs |
| Description: | MOSFETs POWER MOSFET TRANSISTOR |
| Lifecycle: | Active |
| Datasheet: | TPW2900ENH,L1Q Datasheet (PDF) |
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Specifications
| FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 200 V |
| Current - Continuous Drain (Id) @ 25°C | 33A (Tc) |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Rds On (Max) @ Id, Vgs | 29mOhm @ 16.5A, 10V |
| Vgs(th) (Max) @ Id | 4V @ 1mA |
| Gate Charge (Qg) (Max) @ Vgs | 22 nC @ 10 V |
| Vgs (Max) | ±20V |
| Input Capacitance (Ciss) (Max) @ Vds | 2200 pF @ 100 V |
| FET Feature | - |
| Power Dissipation (Max) | 800mW (Ta), 142W (Tc) |
| Operating Temperature | 150°C |
| Grade | - |
| Qualification | - |
| Mounting Type | Surface Mount |
| Supplier Device Package | 8-DSOP Advance |
| Package / Case | 8-PowerVDFN |
📦
Product Attributes
| Packaging | Reel |
| Standard Pack Qty | 5000 |
10,652
Units In Stock
📦 Reel
- 24-hour response
- Global shipping
- Genuine parts guaranteed
Test report available upon request —
view sample report
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Key Specifications
| Category | MOSFETs |
| RoHS | RoHS Compliant |
| Lifecycle | |
| Lead Time | 126 Days (from factory) |
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Documentation
⬇ Download Datasheet
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Compliance & Export
| Country / Standard | Code |
|---|---|
| CNHTS | 8541290000 |
| USHTS | 8541290065 |
| TARIC | 8541290000 |
| ECCN | EAR99 |
ℹ
Product Overview
TPW2900ENH,L1Q is a mosfets part produced by Toshiba for use across a range of applications. Technical specifications for this part include FET type: N-Channel, technology: MOSFET (Metal Oxide), drain to source voltage: 200 V, current, continuous drain (id) @ 25°C: 33A (Tc), drive voltage: 10V and rds on (max) @ id, vgs: 29mOhm @ 16.5A, 10V. This part has a typical lead time of 126 Days from factory and ships with a full manufacturer datasheet available for download. Order TPW2900ENH,L1Q from Simplytronix for authenticated stock and same-day order processing.
