*For representation only.
TRS10V65H,LQ
| Mfr. No: | TRS10V65H,LQ |
| Mfr.: | Toshiba |
| Category: | SiC Schottky Diodes |
| Description: | SiC Schottky Diodes G3 SiC-SBD 650V 10A DFN8x8 |
| Lifecycle: | Active |
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Specifications
| Technology | SiC (Silicon Carbide) Schottky |
| Voltage - DC Reverse (Vr) (Max) | 650 V |
| Current - Average Rectified (Io) | 10A |
| Voltage - Forward (Vf) (Max) @ If | 1.35 V @ 10 A |
| Speed | Zero Recovery Time > 500mA (Io) |
| Reverse Recovery Time (trr) | 0 ns |
| Current - Reverse Leakage @ Vr | 100 µA @ 650 V |
| Capacitance @ Vr, F | 649pF @ 1V, 1MHz |
| Mounting Type | Surface Mount |
| Package / Case | 4-VSFN Exposed Pad |
| Supplier Device Package | 4-DFN-EP (8x8) |
| Operating Temperature - Junction | 175°C |
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Product Attributes
| Packaging | Reel |
| Standard Pack Qty | 2500 |
4,781
Units In Stock
📦 Reel
- 24-hour response
- Global shipping
- Genuine parts guaranteed
Test report available upon request —
view sample report
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Key Specifications
| Category | SiC Schottky Diodes |
| RoHS | RoHS Compliant |
| Lifecycle | |
| Lead Time | 182 Days (from factory) |
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Documentation
Datasheet not available
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Compliance & Export
| Country / Standard | Code |
|---|---|
| CAHTS | 8541100090 |
| USHTS | 8541100080 |
| TARIC | 8541100000 |
| ECCN | EAR99 |
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Product Overview
Toshiba manufactures the TRS10V65H,LQ, a sic schottky diodes part used in electronic assemblies. Technical specifications for this part include technology: SiC (Silicon Carbide) Schottky, voltage, DC reverse (vr): 650 V, current, average rectified: 10A, voltage, forward (vf) (max) @ if: 1.35 V @ 10 A, speed: Zero Recovery Time > 500mA (Io) and reverse recovery time: 0 ns. This part has a typical lead time of 182 Days from factory. You can source TRS10V65H,LQ through Simplytronix, with fast shipping and verified authenticity.
