*For representation only.
TRS12N65FB,S1Q
| Mfr. No: | TRS12N65FB,S1Q |
| Mfr.: | Toshiba |
| Category: | SiC Schottky Diodes |
| Description: | SiC Schottky Diodes SCHOTTKY BARRIER DIODE TO-247 V=650 IF=12A |
| Lifecycle: | Active |
| Datasheet: | TRS12N65FB,S1Q Datasheet (PDF) |
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Specifications
| Diode Configuration | 1 Pair Common Cathode |
| Technology | SiC (Silicon Carbide) Schottky |
| Voltage - DC Reverse (Vr) (Max) | 650 V |
| Current - Average Rectified (Io) (per Diode) | 6A (DC) |
| Voltage - Forward (Vf) (Max) @ If | 1.6 V @ 6 A |
| Speed | No Recovery Time > 500mA (Io) |
| Reverse Recovery Time (trr) | 0 ns |
| Current - Reverse Leakage @ Vr | 30 µA @ 650 V |
| Operating Temperature - Junction | 175°C |
| Mounting Type | Through Hole |
| Package / Case | TO-247-3 |
| Supplier Device Package | TO-247 |
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Product Attributes
| Packaging | Tube |
| Standard Pack Qty | 30 |
6,171
Units In Stock
📦 Tube
- 24-hour response
- Global shipping
- Genuine parts guaranteed
Test report available upon request —
view sample report
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Key Specifications
| Category | SiC Schottky Diodes |
| RoHS | RoHS Compliant |
| Lifecycle | |
| Lead Time | 0 Days (from factory) |
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Documentation
⬇ Download Datasheet
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Compliance & Export
| Country / Standard | Code |
|---|---|
| USHTS | 8541100080 |
| ECCN | EAR99 |
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Product Overview
Toshiba manufactures the TRS12N65FB,S1Q, a sic schottky diodes part used in electronic assemblies. This part is specified with diode configuration: 1 Pair Common Cathode, technology: SiC (Silicon Carbide) Schottky, voltage, DC reverse (vr): 650 V, current, average rectified (io): 6A (DC), voltage, forward (vf) (max) @ if: 1.6 V @ 6 A and speed: No Recovery Time > 500mA (Io). This part has a typical lead time of 0 Days from factory and ships with a full manufacturer datasheet available for download. You can source TRS12N65FB,S1Q through Simplytronix, with fast shipping and verified authenticity.
