| Mfr. No: | TRS15N120HB,S1Q |
| Mfr.: | Toshiba |
| Category: | SiC Schottky Diodes |
| Description: | SiC Schottky Diodes RECT 1.2KV 25A RDL SIC SKY |
| Lifecycle: | Active |
| Datasheet: | TRS15N120HB,S1Q Datasheet (PDF) |
| Diode Configuration | 1 Pair Common Cathode |
| Technology | SiC (Silicon Carbide) Schottky |
| Voltage - DC Reverse (Vr) (Max) | 1200 V |
| Current - Average Rectified (Io) (per Diode) | 25A |
| Voltage - Forward (Vf) (Max) @ If | 1.45 V @ 7.5 A |
| Speed | No Recovery Time > 500mA (Io) |
| Reverse Recovery Time (trr) | 0 ns |
| Current - Reverse Leakage @ Vr | 60 µA @ 1200 V |
| Operating Temperature - Junction | 175°C |
| Grade | - |
| Qualification | - |
| Mounting Type | Through Hole |
| Package / Case | TO-247-3 |
| Supplier Device Package | TO-247 |
| Packaging | Tube |
| Standard Pack Qty | 30 |
| Category | SiC Schottky Diodes |
| RoHS | RoHS Compliant |
| Lifecycle | New Product |
| Lead Time | 0 Days (from factory) |
| Country / Standard | Code |
|---|---|
| CAHTS | 8541100090 |
| USHTS | 8541100080 |
| TARIC | 8541100000 |
| ECCN | EAR99 |
The TRS15N120HB,S1Q, made by Toshiba, belongs to the sic schottky diodes product category. Technical specifications for this part include diode configuration: 1 Pair Common Cathode, technology: SiC (Silicon Carbide) Schottky, voltage, DC reverse (vr): 1200 V, current, average rectified (io): 25A, voltage, forward (vf) (max) @ if: 1.45 V @ 7.5 A and speed: No Recovery Time > 500mA (Io). This part has a typical lead time of 0 Days from factory and ships with a full manufacturer datasheet available for download. Simplytronix stocks TRS15N120HB,S1Q for same-day shipping with genuine parts guaranteed.