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| Mfr. No: | TW083U65C,RQ |
| Mfr.: | Toshiba |
| Category: | SiC MOSFETs |
| Description: | SiC MOSFETs N-ch SiC MOSFET, VDSS=650 V, PD=111W, TOLL, 3rd Gen. |
| Lifecycle: | Active |
| FET Type | N-Channel |
| Technology | SiCFET (Silicon Carbide) |
| Drain to Source Voltage (Vdss) | 650 V |
| Current - Continuous Drain (Id) @ 25°C | 28A (Tc) |
| Drive Voltage (Max Rds On, Min Rds On) | 18V |
| Rds On (Max) @ Id, Vgs | 124mOhm @ 15A, 18V |
| Vgs(th) (Max) @ Id | 5V @ 600µA |
| Gate Charge (Qg) (Max) @ Vgs | 28 nC @ 18 V |
| Vgs (Max) | +25V, -10V |
| Input Capacitance (Ciss) (Max) @ Vds | 873 pF @ 400 V |
| FET Feature | - |
| Power Dissipation (Max) | 111W (Tc) |
| Operating Temperature | 175°C |
| Grade | - |
| Qualification | - |
| Mounting Type | Surface Mount |
| Supplier Device Package | TOLL |
| Package / Case | 8-PowerSFN |
| Packaging | Reel |
| Standard Pack Qty | 2000 |
| Category | SiC MOSFETs |
| RoHS | RoHS Compliant |
| Lifecycle | New Product |
| Lead Time | 0 Days (from factory) |
| Country / Standard | Code |
|---|---|
| USHTS | 8541290055 |
| ECCN | EAR99 |
TW083U65C,RQ is a sic mosfets component manufactured by Toshiba. Notable characteristics of this part include FET type: N-Channel, technology: SiCFET (Silicon Carbide), drain to source voltage: 650 V, current, continuous drain (id) @ 25°C: 28A (Tc), drive voltage: 18V and rds on (max) @ id, vgs: 124mOhm @ 15A, 18V. This part has a typical lead time of 0 Days from factory. Simplytronix offers TW083U65C,RQ in stock, verified authentic and ready for same-day dispatch.
