*For representation only.
TW123V65C,LQ
| Mfr. No: | TW123V65C,LQ |
| Mfr.: | Toshiba |
| Category: | SiC MOSFETs |
| Description: | SiC MOSFETs N-ch SiC MOSFET, 650 V, 0.123 Ohma.18 V, DFN 8 x 8, 3rd Gen. |
| Lifecycle: | Active |
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Specifications
| FET Type | N-Channel |
| Technology | SiCFET (Silicon Carbide) |
| Drain to Source Voltage (Vdss) | 650 V |
| Current - Continuous Drain (Id) @ 25°C | 18A (Tc) |
| Drive Voltage (Max Rds On, Min Rds On) | 18V |
| Rds On (Max) @ Id, Vgs | 183mOhm @ 10A, 18V |
| Vgs(th) (Max) @ Id | 5V @ 1.2mA |
| Gate Charge (Qg) (Max) @ Vgs | 21 nC @ 18 V |
| Vgs (Max) | +25V, -10V |
| Input Capacitance (Ciss) (Max) @ Vds | 600 pF @ 400 V |
| FET Feature | - |
| Power Dissipation (Max) | 76W (Tc) |
| Operating Temperature | 175°C |
| Grade | - |
| Qualification | - |
| Mounting Type | Surface Mount |
| Supplier Device Package | 4-DFN-EP (8x8) |
| Package / Case | 4-VSFN Exposed Pad |
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Product Attributes
| Packaging | Reel |
| Standard Pack Qty | 2500 |
14,638
Units In Stock
📦 Reel
- 24-hour response
- Global shipping
- Genuine parts guaranteed
Test report available upon request —
view sample report
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Key Specifications
| Category | SiC MOSFETs |
| RoHS | RoHS Compliant |
| Lifecycle | New Product |
| Lead Time | 0 Days (from factory) |
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Documentation
Datasheet not available
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Compliance & Export
| Country / Standard | Code |
|---|---|
| USHTS | 8541290055 |
| ECCN | EAR99 |
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Product Overview
The TW123V65C,LQ, made by Toshiba, belongs to the sic mosfets product category. This part is specified with FET type: N-Channel, technology: SiCFET (Silicon Carbide), drain to source voltage: 650 V, current, continuous drain (id) @ 25°C: 18A (Tc), drive voltage: 18V and rds on (max) @ id, vgs: 183mOhm @ 10A, 18V. This part has a typical lead time of 0 Days from factory. Simplytronix stocks TW123V65C,LQ for same-day shipping with genuine parts guaranteed.
