*For representation only.
XPN12006NC,L1XHQ
| Mfr. No: | XPN12006NC,L1XHQ |
| Mfr.: | Toshiba |
| Category: | MOSFETs |
| Description: | MOSFETs TSON N-CH 60V 20A |
| Datasheet: | XPN12006NC,L1XHQ Datasheet (PDF) |
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Specifications
| FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 60 V |
| Current - Continuous Drain (Id) @ 25°C | 20A |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Rds On (Max) @ Id, Vgs | 12mOhm @ 10A, 10V |
| Vgs(th) (Max) @ Id | 2.5V @ 200µA |
| Gate Charge (Qg) (Max) @ Vgs | 23 nC @ 10 V |
| Vgs (Max) | ±20V |
| Input Capacitance (Ciss) (Max) @ Vds | 1100 pF @ 10 V |
| Power Dissipation (Max) | 65W (Tc) |
| Operating Temperature | -55°C ~ 175°C |
| Grade | Automotive |
| Qualification | AEC-Q101 |
| Mounting Type | Surface Mount |
| Supplier Device Package | 8-TSON Advance-WF (3.1x3.1) |
| Package / Case | 8-PowerVDFN |
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Product Attributes
| Packaging | Reel |
| Standard Pack Qty | 5000 |
13,831
Units In Stock
📦 Reel
- 24-hour response
- Global shipping
- Genuine parts guaranteed
Test report available upon request —
view sample report
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Key Specifications
| Category | MOSFETs |
| RoHS | RoHS Compliant |
| Lifecycle | |
| Lead Time | 140 Days (from factory) |
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Documentation
⬇ Download Datasheet
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Compliance & Export
| Country / Standard | Code |
|---|---|
| CNHTS | 8541290000 |
| USHTS | 8541290065 |
| TARIC | 8541290000 |
| ECCN | EAR99 |
ℹ
Product Overview
The XPN12006NC,L1XHQ from Toshiba falls under the mosfets category. It features FET type: N-Channel, technology: MOSFET (Metal Oxide), drain to source voltage: 60 V, current, continuous drain (id) @ 25°C: 20A, drive voltage: 4.5V, 10V and rds on (max) @ id, vgs: 12mOhm @ 10A, 10V. This part has a typical lead time of 140 Days from factory and ships with a full manufacturer datasheet available for download. XPN12006NC,L1XHQ is available through Simplytronix, sourced and verified for authenticity.
