| Mfr. No: | 2SC5087R(TE85L,F) |
| Mfr.: | Toshiba |
| Category: | RF Bipolar Transistors |
| Description: | RF Bipolar Transistors RF Device VHF/UHF 12V 150mW 13.5dB |
| Lifecycle: | Obsolete |
| Transistor Type | NPN |
| Voltage - Collector Emitter Breakdown (Max) | 12V |
| Frequency - Transition | 8GHz |
| Noise Figure (dB Typ @ f) | 1.1dB ~ 2dB @ 1GHz |
| Gain | - |
| Power - Max | 150mW |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 120 @ 20mA, 10V |
| Current - Collector (Ic) (Max) | 80mA |
| Operating Temperature | 125°C (TJ) |
| Mounting Type | Surface Mount |
| Package / Case | SC-61AA |
| Supplier Device Package | SMQ |
| Packaging | Reel |
| Standard Pack Qty | 3000 |
| Category | RF Bipolar Transistors |
| RoHS | RoHS Compliant |
| Lifecycle | |
| Lead Time | 0 Days (from factory) |
| Country / Standard | Code |
|---|---|
| CNHTS | 8541210000 |
| CAHTS | 8541210000 |
| USHTS | 8541210075 |
| JPHTS | 8541210101 |
| KRHTS | 8541219000 |
| TARIC | 8541210000 |
| MXHTS | 85412101 |
| ECCN | EAR99 |
Manufactured by Toshiba, the 2SC5087R(TE85L,F) is classified under rf bipolar transistors. Key specifications include transistor type: NPN, voltage, collector emitter breakdown: 12V, frequency, transition: 8GHz, noise figure: 1.1dB ~ 2dB @ 1GHz, gain: - and power, max: 150mW. This part has a typical lead time of 0 Days from factory. Get 2SC5087R(TE85L,F) from Simplytronix, shipped same day with a genuine parts guarantee.