*For representation only.
MT3S113(TE85L,F)
| Mfr. No: | MT3S113(TE85L,F) |
| Mfr.: | Toshiba |
| Category: | RF Bipolar Transistors |
| Description: | RF Bipolar Transistors RF Bipolar Transistor .1A 800mW |
| Lifecycle: | Obsolete |
| Datasheet: | MT3S113(TE85L,F) Datasheet (PDF) |
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Specifications
| Transistor Type | NPN |
| Voltage - Collector Emitter Breakdown (Max) | 5.3V |
| Frequency - Transition | 12.5GHz |
| Noise Figure (dB Typ @ f) | 1.45dB @ 1GHz |
| Gain | 11.8dB |
| Power - Max | 800mW |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 200 @ 30mA, 5V |
| Current - Collector (Ic) (Max) | 100mA |
| Operating Temperature | 150°C (TJ) |
| Mounting Type | Surface Mount |
| Package / Case | TO-236-3, SC-59, SOT-23-3 |
| Supplier Device Package | S-Mini |
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Product Attributes
| Packaging | Reel |
| Standard Pack Qty | 3000 |
8,191
Units In Stock
📦 Reel
- 24-hour response
- Global shipping
- Genuine parts guaranteed
Test report available upon request —
view sample report
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Key Specifications
| Category | RF Bipolar Transistors |
| RoHS | RoHS Compliant |
| Lifecycle | End of Life |
| Lead Time | 0 Days (from factory) |
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Documentation
⬇ Download Datasheet
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Compliance & Export
| Country / Standard | Code |
|---|---|
| CNHTS | 8541210000 |
| USHTS | 8541210075 |
| ECCN | EAR99 |
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Product Overview
MT3S113(TE85L,F) is a rf bipolar transistors component manufactured by Toshiba. This part is specified with transistor type: NPN, voltage, collector emitter breakdown: 5.3V, frequency, transition: 12.5GHz, noise figure: 1.45dB @ 1GHz, gain: 11.8dB and power, max: 800mW. This part has a typical lead time of 0 Days from factory and ships with a full manufacturer datasheet available for download. Simplytronix offers MT3S113(TE85L,F) in stock, verified authentic and ready for same-day dispatch.
