*For representation only.
MT3S113TU,LF
| Mfr. No: | MT3S113TU,LF |
| Mfr.: | Toshiba |
| Category: | RF Bipolar Transistors |
| Description: | RF Bipolar Transistors RF Bipolar Transistor .1A 900mW |
| Lifecycle: | Active |
| Datasheet: | MT3S113TU,LF Datasheet (PDF) |
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Specifications
| Transistor Type | NPN |
| Voltage - Collector Emitter Breakdown (Max) | 5.3V |
| Frequency - Transition | 11.2GHz |
| Noise Figure (dB Typ @ f) | 1.45dB @ 1GHz |
| Gain | 12.5dB |
| Power - Max | 900mW |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 200 @ 30mA, 5V |
| Current - Collector (Ic) (Max) | 100mA |
| Operating Temperature | 150°C (TJ) |
| Mounting Type | Surface Mount |
| Package / Case | 3-SMD, Flat Leads |
| Supplier Device Package | UFM |
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Product Attributes
| Packaging | Reel |
| Standard Pack Qty | 3000 |
9,985
Units In Stock
📦 Reel
- 24-hour response
- Global shipping
- Genuine parts guaranteed
Test report available upon request —
view sample report
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Key Specifications
| Category | RF Bipolar Transistors |
| RoHS | RoHS Compliant |
| Lifecycle | |
| Lead Time | 112 Days (from factory) |
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Documentation
⬇ Download Datasheet
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Compliance & Export
| Country / Standard | Code |
|---|---|
| CNHTS | 8541210000 |
| USHTS | 8541210075 |
| ECCN | EAR99 |
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Product Overview
As a rf bipolar transistors component, the MT3S113TU,LF is manufactured and supplied by Toshiba. Among its key specs are transistor type: NPN, voltage, collector emitter breakdown: 5.3V, frequency, transition: 11.2GHz, noise figure: 1.45dB @ 1GHz, gain: 12.5dB and power, max: 900mW. This part has a typical lead time of 112 Days from factory and ships with a full manufacturer datasheet available for download. Simplytronix carries MT3S113TU,LF in stock, backed by a genuine parts guarantee and quick dispatch.
