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TJ10S04M3L,LXHQ Toshiba
*For representation only.

TJ10S04M3L,LXHQ

Mfr. No: TJ10S04M3L,LXHQ
Mfr.: Toshiba
Category: MOSFETs
Description: MOSFETs 27W 1MHz Automotive; AEC-Q101
Datasheet: TJ10S04M3L,LXHQ Datasheet (PDF)
⚙ Specifications
FET Type P-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 40 V
Current - Continuous Drain (Id) @ 25°C 10A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 6V, 10V
Rds On (Max) @ Id, Vgs 44mOhm @ 5A, 10V
Vgs(th) (Max) @ Id 3V @ 1mA
Gate Charge (Qg) (Max) @ Vgs 19 nC @ 10 V
Vgs (Max) +10V, -20V
Input Capacitance (Ciss) (Max) @ Vds 930 pF @ 10 V
FET Feature -
Power Dissipation (Max) 27W (Tc)
Operating Temperature 175°C
Grade Automotive
Qualification AEC-Q101
Mounting Type Surface Mount
Supplier Device Package DPAK+
Package / Case TO-252-3, DPAK (2 Leads + Tab), SC-63
📦 Product Attributes
Packaging Reel
Standard Pack Qty 2000
🔁 Alternate / Replacement Parts
Alternate Packaging
Suggested Replacement
7,552
Units In Stock
📦 Reel
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🔑 Key Specifications
Category MOSFETs
RoHS RoHS Compliant
Lifecycle
Lead Time 0 Days (from factory)
📄 Documentation
⬇ Download Datasheet
🌐 Compliance & Export
Country / Standard Code
CNHTS 8541290000
USHTS 8541290065
TARIC 8541290000
ECCN EAR99
ℹ Product Overview

Manufactured by Toshiba, the TJ10S04M3L,LXHQ is classified under mosfets. This part is specified with FET type: P-Channel, technology: MOSFET (Metal Oxide), drain to source voltage: 40 V, current, continuous drain (id) @ 25°C: 10A (Ta), drive voltage: 6V, 10V and rds on (max) @ id, vgs: 44mOhm @ 5A, 10V. This part has a typical lead time of 0 Days from factory and ships with a full manufacturer datasheet available for download. Get TJ10S04M3L,LXHQ from Simplytronix, shipped same day with a genuine parts guarantee.

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