| Mfr. No: | TK39N60X,S1F |
| Mfr.: | Toshiba |
| Category: | MOSFETs |
| Description: | MOSFETs DTMOSIV-H/S 600V 65mOhmmax(VGS=10V) |
| Datasheet: | TK39N60X,S1F Datasheet (PDF) |
| FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 600 V |
| Current - Continuous Drain (Id) @ 25°C | 38.8A (Ta) |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Rds On (Max) @ Id, Vgs | 65mOhm @ 12.5A, 10V |
| Vgs(th) (Max) @ Id | 3.5V @ 1.9mA |
| Gate Charge (Qg) (Max) @ Vgs | 85 nC @ 10 V |
| Vgs (Max) | ±30V |
| Input Capacitance (Ciss) (Max) @ Vds | 4100 pF @ 300 V |
| FET Feature | - |
| Power Dissipation (Max) | 270W (Tc) |
| Operating Temperature | 150°C (TJ) |
| Grade | - |
| Qualification | - |
| Mounting Type | Through Hole |
| Supplier Device Package | TO-247 |
| Package / Case | TO-247-3 |
| Packaging | Tube |
| Standard Pack Qty | 30 |
| Category | MOSFETs |
| RoHS | RoHS Compliant |
| Lifecycle | |
| Lead Time | 40 Days (from factory) |
| Country / Standard | Code |
|---|---|
| CNHTS | 8541290000 |
| CAHTS | 8541290000 |
| USHTS | 8541290065 |
| JPHTS | 8541290100 |
| KRHTS | 8541299000 |
| TARIC | 8541290000 |
| MXHTS | 85412999 |
| ECCN | EAR99 |
Toshiba manufactures the TK39N60X,S1F, a mosfets part used in electronic assemblies. Among its key specs are FET type: N-Channel, technology: MOSFET (Metal Oxide), drain to source voltage: 600 V, current, continuous drain (id) @ 25°C: 38.8A (Ta), drive voltage: 10V and rds on (max) @ id, vgs: 65mOhm @ 12.5A, 10V. This part has a typical lead time of 40 Days from factory and ships with a full manufacturer datasheet available for download. You can source TK39N60X,S1F through Simplytronix, with fast shipping and verified authenticity.