*For representation only.
TRS40N120HB,S1Q
| Mfr. No: | TRS40N120HB,S1Q |
| Mfr.: | Toshiba |
| Category: | SiC Schottky Diodes |
| Description: | SiC Schottky Diodes 1200 V/40 A SiC Schottky Barrier Diode, TO-247 |
| Lifecycle: | Active |
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Specifications
| Diode Configuration | 1 Pair Common Cathode |
| Technology | SiC (Silicon Carbide) Schottky |
| Voltage - DC Reverse (Vr) (Max) | 1200 V |
| Current - Average Rectified (Io) (per Diode) | 51A |
| Voltage - Forward (Vf) (Max) @ If | 1.45 V @ 20 A |
| Speed | No Recovery Time > 500mA (Io) |
| Reverse Recovery Time (trr) | 0 ns |
| Current - Reverse Leakage @ Vr | 130 µA @ 1200 V |
| Operating Temperature - Junction | 175°C |
| Grade | - |
| Qualification | - |
| Mounting Type | Through Hole |
| Package / Case | TO-247-3 |
| Supplier Device Package | TO-247 |
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Product Attributes
| Packaging | |
| Standard Pack Qty |
11,208
Units In Stock
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- 24-hour response
- Global shipping
- Genuine parts guaranteed
Test report available upon request —
view sample report
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Key Specifications
| Category | SiC Schottky Diodes |
| RoHS | RoHS Compliant |
| Lifecycle | New Product |
| Lead Time | 0 Days (from factory) |
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Documentation
Datasheet not available
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Compliance & Export
| Country / Standard | Code |
|---|---|
| CAHTS | 8541100090 |
| USHTS | 8541100080 |
| TARIC | 8541100000 |
| ECCN | EAR99 |
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Product Overview
The TRS40N120HB,S1Q from Toshiba falls under the sic schottky diodes category. Key specifications include diode configuration: 1 Pair Common Cathode, technology: SiC (Silicon Carbide) Schottky, voltage, DC reverse (vr): 1200 V, current, average rectified (io): 51A, voltage, forward (vf) (max) @ if: 1.45 V @ 20 A and speed: No Recovery Time > 500mA (Io). This part has a typical lead time of 0 Days from factory. TRS40N120HB,S1Q is available through Simplytronix, sourced and verified for authenticity.
