*For representation only.
IRFR110PBF-BE3
| Mfr. No: | IRFR110PBF-BE3 |
| Mfr.: | Vishay / Siliconix |
| Category: | MOSFETs |
| Description: | MOSFETs TO252 100V 4.3A N-CH MOSFET |
| Lifecycle: | Active |
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Specifications
| FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 100 V |
| Current - Continuous Drain (Id) @ 25°C | 4.3A (Tc) |
| Rds On (Max) @ Id, Vgs | 540mOhm @ 2.6A, 10V |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Gate Charge (Qg) (Max) @ Vgs | 8.3 nC @ 10 V |
| Vgs (Max) | ±20V |
| Input Capacitance (Ciss) (Max) @ Vds | 180 pF @ 25 V |
| FET Feature | - |
| Power Dissipation (Max) | 2.5W (Ta), 25W (Tc) |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Grade | - |
| Qualification | - |
| Mounting Type | Surface Mount |
| Supplier Device Package | TO-252AA |
| Package / Case | TO-252-3, DPAK (2 Leads + Tab), SC-63 |
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Product Attributes
| Packaging | Tube |
| Standard Pack Qty | 3000 |
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Alternate / Replacement Parts
| Alternate Packaging | IRFR110PBF |
| Suggested Replacement |
6,598
Units In Stock
📦 Tube
- 24-hour response
- Global shipping
- Genuine parts guaranteed
Test report available upon request —
view sample report
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Key Specifications
| Category | MOSFETs |
| RoHS | RoHS Compliant |
| Lifecycle | |
| Lead Time | 0 Days (from factory) |
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Documentation
Datasheet not available
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Compliance & Export
| Country / Standard | Code |
|---|---|
| CNHTS | 8541290000 |
| TARIC | 8541290000 |
| USHTS | 8541290065 |
| ECCN | EAR99 |
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Product Overview
The IRFR110PBF-BE3 from Vishay / Siliconix falls under the mosfets category. Technical specifications for this part include FET type: N-Channel, technology: MOSFET (Metal Oxide), drain to source voltage: 100 V, current, continuous drain (id) @ 25°C: 4.3A (Tc), rds on (max) @ id, vgs: 540mOhm @ 2.6A, 10V and vgs(th) (max) @ id: 4V @ 250µA. This part has a typical lead time of 0 Days from factory. IRFR110PBF-BE3 is available through Simplytronix, sourced and verified for authenticity.
