*For representation only.
MXP120A045SE-T1GE3
| Mfr. No: | MXP120A045SE-T1GE3 |
| Mfr.: | Vishay Semiconductors |
| Category: | SiC MOSFETs |
| Description: | SiC MOSFETs 1200-V N-CHANNEL SIC MOSFET |
| Lifecycle: | Active |
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Specifications
| FET Type | N-Channel |
| Technology | SiCFET (Silicon Carbide) |
| Drain to Source Voltage (Vdss) | 1200 V |
| Current - Continuous Drain (Id) @ 25°C | 52A (Tc) |
| Drive Voltage (Max Rds On, Min Rds On) | 15V, 18V |
| Rds On (Max) @ Id, Vgs | 56mOhm @ 26A, 18V |
| Vgs(th) (Max) @ Id | 2.8V @ 5mA |
| Gate Charge (Qg) (Max) @ Vgs | 82 nC @ 18 V |
| Vgs (Max) | +22V, -10V |
| Input Capacitance (Ciss) (Max) @ Vds | 2483 pF @ 800 V |
| FET Feature | - |
| Power Dissipation (Max) | 268W (Tc) |
| Operating Temperature | -55°C ~ 175°C |
| Grade | - |
| Qualification | - |
| Mounting Type | Surface Mount |
| Supplier Device Package | D2PAK-7L (TO-263 7L) |
| Package / Case | TO-263-8, D2PAK (7 Leads + Tab), TO-263CA |
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Product Attributes
| Packaging | |
| Standard Pack Qty | 800 |
6,112
Units In Stock
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- Global shipping
- Genuine parts guaranteed
Test report available upon request —
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Key Specifications
| Category | SiC MOSFETs |
| RoHS | |
| Lifecycle | New Product |
| Lead Time | 168 Days (from factory) |
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Documentation
Datasheet not available
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Product Overview
MXP120A045SE-T1GE3 is a sic mosfets part produced by Vishay Semiconductors for use across a range of applications. Its datasheet lists FET type: N-Channel, technology: SiCFET (Silicon Carbide), drain to source voltage: 1200 V, current, continuous drain (id) @ 25°C: 52A (Tc), drive voltage: 15V, 18V and rds on (max) @ id, vgs: 56mOhm @ 26A, 18V. This part has a typical lead time of 168 Days from factory. Order MXP120A045SE-T1GE3 from Simplytronix for authenticated stock and same-day order processing.
