*For representation only.
SQ2325CES-T1_GE3
| Mfr. No: | SQ2325CES-T1_GE3 |
| Mfr.: | Vishay Semiconductors |
| Category: | MOSFETs |
| Description: | MOSFETs P-CHANNEL 150-V (D-S) 175C MOSFET |
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Specifications
| FET Type | P-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 150 V |
| Current - Continuous Drain (Id) @ 25°C | 840mA (Tc) |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Rds On (Max) @ Id, Vgs | 1.77Ohm @ 500mA, 10V |
| Vgs(th) (Max) @ Id | 3.5V @ 250µA |
| Gate Charge (Qg) (Max) @ Vgs | 10 nC @ 10 V |
| Vgs (Max) | ±20V |
| Input Capacitance (Ciss) (Max) @ Vds | 257 pF @ 50 V |
| Power Dissipation (Max) | 3W (Tc) |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Grade | Automotive |
| Qualification | AEC-Q101 |
| Mounting Type | Surface Mount |
| Supplier Device Package | SOT-23-3 (TO-236) |
| Package / Case | TO-236-3, SC-59, SOT-23-3 |
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Product Attributes
| Packaging | |
| Standard Pack Qty |
7,590
Units In Stock
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- 24-hour response
- Global shipping
- Genuine parts guaranteed
Test report available upon request —
view sample report
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Key Specifications
| Category | MOSFETs |
| RoHS | |
| Lifecycle | |
| Lead Time | (from factory) |
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Documentation
Datasheet not available
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Product Overview
As a mosfets component, the SQ2325CES-T1_GE3 is manufactured and supplied by Vishay Semiconductors. Technical specifications for this part include FET type: P-Channel, technology: MOSFET (Metal Oxide), drain to source voltage: 150 V, current, continuous drain (id) @ 25°C: 840mA (Tc), drive voltage: 10V and rds on (max) @ id, vgs: 1.77Ohm @ 500mA, 10V. Simplytronix carries SQ2325CES-T1_GE3 in stock, backed by a genuine parts guarantee and quick dispatch.