| Mfr. No: | SQ4282EY-T1_GE3 |
| Mfr.: | Vishay / Siliconix |
| Category: | MOSFETs |
| Description: | MOSFETs N Ch 30Vds 20Vgs AEC-Q101 Qualified |
| Datasheet: | SQ4282EY-T1_GE3 Datasheet (PDF) |
| Technology | MOSFET (Metal Oxide) |
| Configuration | 2 N-Channel (Dual) |
| FET Feature | - |
| Drain to Source Voltage (Vdss) | 30V |
| Current - Continuous Drain (Id) @ 25°C | 8A (Tc) |
| Rds On (Max) @ Id, Vgs | 12.3mOhm @ 15A, 10V |
| Vgs(th) (Max) @ Id | 2.5V @ 250µA |
| Gate Charge (Qg) (Max) @ Vgs | 47nC @ 10V |
| Input Capacitance (Ciss) (Max) @ Vds | 2367pF @ 15V |
| Power - Max | 3.9W |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Grade | Automotive |
| Qualification | AEC-Q101 |
| Mounting Type | Surface Mount |
| Package / Case | 8-SOIC (0.154", 3.90mm Width) |
| Supplier Device Package | 8-SOIC |
| Packaging | Reel |
| Standard Pack Qty | 2500 |
| Alternate Packaging | SQ4282EY-T1_BE3 |
| Suggested Replacement | SQ4282EY-T1_BE3 |
| Category | MOSFETs |
| RoHS | RoHS Compliant |
| Lifecycle | |
| Lead Time | 0 Days (from factory) |
| Country / Standard | Code |
|---|---|
| CNHTS | 8541290000 |
| CAHTS | 8542390000 |
| USHTS | 8541290065 |
| TARIC | 8541290000 |
| MXHTS | 8542399901 |
| ECCN | EAR99 |
SQ4282EY-T1_GE3 is a mosfets part produced by Vishay / Siliconix for use across a range of applications. Technical specifications for this part include technology: MOSFET (Metal Oxide), configuration: 2 N-Channel (Dual), FET feature: -, drain to source voltage: 30V, current, continuous drain (id) @ 25°C: 8A (Tc) and rds on (max) @ id, vgs: 12.3mOhm @ 15A, 10V. This part has a typical lead time of 0 Days from factory and ships with a full manufacturer datasheet available for download. Order SQ4282EY-T1_GE3 from Simplytronix for authenticated stock and same-day order processing.