*For representation only.
VS-4C12ET07S2L-M3
| Mfr. No: | VS-4C12ET07S2L-M3 |
| Mfr.: | Vishay Semiconductors |
| Category: | SiC Schottky Diodes |
| Description: | SiC Schottky Diodes SiCG4D2PAK2L |
| Lifecycle: | Active |
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Specifications
| Technology | SiC (Silicon Carbide) Schottky |
| Voltage - DC Reverse (Vr) (Max) | 650 V |
| Current - Average Rectified (Io) | 12A |
| Voltage - Forward (Vf) (Max) @ If | 1.5 V @ 12 A |
| Speed | Zero Recovery Time > 500mA (Io) |
| Reverse Recovery Time (trr) | 0 ns |
| Current - Reverse Leakage @ Vr | 80 µA @ 650 V |
| Capacitance @ Vr, F | 549pF @ 1V, 1MHz |
| Grade | - |
| Qualification | - |
| Mounting Type | Surface Mount |
| Package / Case | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB |
| Supplier Device Package | TO-263AB (D2PAK) |
| Operating Temperature - Junction | -55°C ~ 175°C |
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Product Attributes
| Packaging | Reel |
| Standard Pack Qty | 800 |
11,484
Units In Stock
📦 Reel
- 24-hour response
- Global shipping
- Genuine parts guaranteed
Test report available upon request —
view sample report
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Key Specifications
| Category | SiC Schottky Diodes |
| RoHS | RoHS Compliant |
| Lifecycle | New Product |
| Lead Time | 84 Days (from factory) |
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Documentation
Datasheet not available
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Product Overview
Vishay Semiconductors manufactures the VS-4C12ET07S2L-M3, a sic schottky diodes part used in electronic assemblies. Among its key specs are technology: SiC (Silicon Carbide) Schottky, voltage, DC reverse (vr): 650 V, current, average rectified: 12A, voltage, forward (vf) (max) @ if: 1.5 V @ 12 A, speed: Zero Recovery Time > 500mA (Io) and reverse recovery time: 0 ns. This part has a typical lead time of 84 Days from factory. You can source VS-4C12ET07S2L-M3 through Simplytronix, with fast shipping and verified authenticity.
