*For representation only.
VS-4C51EP12L-M3
| Mfr. No: | VS-4C51EP12L-M3 |
| Mfr.: | Vishay Semiconductors |
| Category: | SiC Schottky Diodes |
| Description: | SiC Schottky Diodes Rectifier, SiC, 1200V, 50A, Single, TO-247 2L |
| Lifecycle: | Active |
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Specifications
| Technology | SiC (Silicon Carbide) Schottky |
| Voltage - DC Reverse (Vr) (Max) | 1200 V |
| Current - Average Rectified (Io) | 50A |
| Voltage - Forward (Vf) (Max) @ If | 1.75 V @ 50 A |
| Speed | No Recovery Time > 500mA (Io) |
| Reverse Recovery Time (trr) | 0 ns |
| Current - Reverse Leakage @ Vr | 200 µA @ 1200 V |
| Capacitance @ Vr, F | 2360pF @ 1V, 1MHz |
| Grade | - |
| Qualification | - |
| Mounting Type | Through Hole |
| Package / Case | TO-247-2 |
| Supplier Device Package | TO-247AD |
| Operating Temperature - Junction | -55°C ~ 175°C |
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Product Attributes
| Packaging | Tube |
| Standard Pack Qty | 500 |
7,804
Units In Stock
📦 Tube
- 24-hour response
- Global shipping
- Genuine parts guaranteed
Test report available upon request —
view sample report
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Key Specifications
| Category | SiC Schottky Diodes |
| RoHS | RoHS Compliant |
| Lifecycle | New Product |
| Lead Time | 49 Days (from factory) |
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Documentation
Datasheet not available
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Compliance & Export
| Country / Standard | Code |
|---|---|
| USHTS | 8541100000 |
| ECCN | EAR99 |
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Product Overview
Vishay Semiconductors's VS-4C51EP12L-M3 is a widely used sic schottky diodes part in electronic designs. Among its key specs are technology: SiC (Silicon Carbide) Schottky, voltage, DC reverse (vr): 1200 V, current, average rectified: 50A, voltage, forward (vf) (max) @ if: 1.75 V @ 50 A, speed: No Recovery Time > 500mA (Io) and reverse recovery time: 0 ns. This part has a typical lead time of 49 Days from factory. Simplytronix supplies VS-4C51EP12L-M3 with same-day shipping and guaranteed authenticity.
