| Mfr. No: | VS-FC50LA65 |
| Mfr.: | Vishay Semiconductors |
| Category: | MOSFET Modules |
| Description: | MOSFET Modules Modules Mosfets - SOT-227 MOSFET |
| Lifecycle: | Active |
| FET Type | N-Channel |
| Technology | SiCFET (Silicon Carbide) |
| Drain to Source Voltage (Vdss) | 650 V |
| Current - Continuous Drain (Id) @ 25°C | 58A (Tc) |
| Drive Voltage (Max Rds On, Min Rds On) | 13V |
| Rds On (Max) @ Id, Vgs | 54mOhm @ 50A, 13V |
| Vgs(th) (Max) @ Id | 5.1V @ 250µA |
| Gate Charge (Qg) (Max) @ Vgs | 167 nC @ 13 V |
| Vgs (Max) | ±20V |
| Input Capacitance (Ciss) (Max) @ Vds | 6200 pF @ 400 V |
| FET Feature | - |
| Power Dissipation (Max) | 431W (Tc) |
| Operating Temperature | -55°C ~ 150°C |
| Grade | - |
| Qualification | - |
| Mounting Type | Chassis Mount |
| Supplier Device Package | SOT-227 |
| Package / Case | SOT-227-4, miniBLOC |
| Packaging | |
| Standard Pack Qty | 160 |
| Category | MOSFET Modules |
| RoHS | |
| Lifecycle | New Product |
| Lead Time | 140 Days (from factory) |
As a mosfet modules component, the VS-FC50LA65 is manufactured and supplied by Vishay Semiconductors. This part is specified with FET type: N-Channel, technology: SiCFET (Silicon Carbide), drain to source voltage: 650 V, current, continuous drain (id) @ 25°C: 58A (Tc), drive voltage: 13V and rds on (max) @ id, vgs: 54mOhm @ 50A, 13V. This part has a typical lead time of 140 Days from factory. Simplytronix carries VS-FC50LA65 in stock, backed by a genuine parts guarantee and quick dispatch.