*For representation only.
MXPQ120A080SL-GE3
| Mfr. No: | MXPQ120A080SL-GE3 |
| Mfr.: | Vishay Semiconductors |
| Category: | SiC MOSFETs |
| Description: | SiC MOSFETs 1200-V N-CHANNEL SIC MOSFET |
| Lifecycle: | Active |
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Specifications
| FET Type | N-Channel |
| Technology | SiCFET (Silicon Carbide) |
| Drain to Source Voltage (Vdss) | 1200 V |
| Current - Continuous Drain (Id) @ 25°C | 31A (Tc) |
| Drive Voltage (Max Rds On, Min Rds On) | 15V, 18V |
| Rds On (Max) @ Id, Vgs | 100mOhm @ 14A, 18V |
| Vgs(th) (Max) @ Id | 2.9V @ 2.8mA |
| Gate Charge (Qg) (Max) @ Vgs | 45 nC @ 18 V |
| Vgs (Max) | +22V, -10V |
| Input Capacitance (Ciss) (Max) @ Vds | 1356 pF @ 800 V |
| FET Feature | - |
| Power Dissipation (Max) | 174W (Tc) |
| Operating Temperature | -55°C ~ 175°C |
| Grade | Automotive |
| Qualification | AEC-Q101 |
| Mounting Type | Through Hole |
| Supplier Device Package | TO-247AD-4L |
| Package / Case | TO-247-4 |
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Product Attributes
| Packaging | |
| Standard Pack Qty | 600 |
10,584
Units In Stock
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- 24-hour response
- Global shipping
- Genuine parts guaranteed
Test report available upon request —
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Key Specifications
| Category | SiC MOSFETs |
| RoHS | |
| Lifecycle | New Product |
| Lead Time | 168 Days (from factory) |
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Documentation
Datasheet not available
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Product Overview
The MXPQ120A080SL-GE3 from Vishay Semiconductors falls under the sic mosfets category. This component is defined by FET type: N-Channel, technology: SiCFET (Silicon Carbide), drain to source voltage: 1200 V, current, continuous drain (id) @ 25°C: 31A (Tc), drive voltage: 15V, 18V and rds on (max) @ id, vgs: 100mOhm @ 14A, 18V. This part has a typical lead time of 168 Days from factory. MXPQ120A080SL-GE3 is available through Simplytronix, sourced and verified for authenticity.
