| Mfr. No: | VS-3C06ET07S2L-M3 |
| Mfr.: | Vishay Semiconductors |
| Category: | SiC Schottky Diodes |
| Description: | SiC Schottky Diodes RECT 650V 6A SM POWER SIC |
| Datasheet: | VS-3C06ET07S2L-M3 Datasheet (PDF) |
| Technology | SiC (Silicon Carbide) Schottky |
| Voltage - DC Reverse (Vr) (Max) | 650 V |
| Current - Average Rectified (Io) | 6A |
| Voltage - Forward (Vf) (Max) @ If | 1.5 V @ 6 A |
| Speed | Zero Recovery Time > 500mA (Io) |
| Reverse Recovery Time (trr) | 0 ns |
| Current - Reverse Leakage @ Vr | 35 µA @ 650 V |
| Capacitance @ Vr, F | 255pF @ 1V, 1MHz |
| Mounting Type | Surface Mount |
| Package / Case | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB |
| Supplier Device Package | TO-263AB (D2PAK) |
| Operating Temperature - Junction | -55°C ~ 175°C |
| Packaging | Reel |
| Standard Pack Qty | 800 |
| Category | SiC Schottky Diodes |
| RoHS | RoHS Compliant By Exemption |
| Lifecycle | |
| Lead Time | 0 Days (from factory) |
| Country / Standard | Code |
|---|---|
| TARIC | 8541100000 |
| CAHTS | 8541100090 |
| USHTS | 8541100080 |
| ECCN | EAR99 |
VS-3C06ET07S2L-M3 is a sic schottky diodes component manufactured by Vishay Semiconductors. Key specifications include technology: SiC (Silicon Carbide) Schottky, voltage, DC reverse (vr): 650 V, current, average rectified: 6A, voltage, forward (vf) (max) @ if: 1.5 V @ 6 A, speed: Zero Recovery Time > 500mA (Io) and reverse recovery time: 0 ns. This part has a typical lead time of 0 Days from factory and ships with a full manufacturer datasheet available for download. Simplytronix offers VS-3C06ET07S2L-M3 in stock, verified authentic and ready for same-day dispatch.