*For representation only.
VS-4C30ET12THM3
| Mfr. No: | VS-4C30ET12THM3 |
| Mfr.: | Vishay Semiconductors |
| Category: | SiC Schottky Diodes |
| Description: | SiC Schottky Diodes SicG4TO-2202L |
| Lifecycle: | Active |
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Specifications
| Technology | SiC (Silicon Carbide) Schottky |
| Voltage - DC Reverse (Vr) (Max) | 1200 V |
| Current - Average Rectified (Io) | 30A |
| Voltage - Forward (Vf) (Max) @ If | 1.5 V @ 30 A |
| Speed | Zero Recovery Time > 500mA (Io) |
| Reverse Recovery Time (trr) | 0 ns |
| Current - Reverse Leakage @ Vr | 160 µA @ 1.2 kV |
| Capacitance @ Vr, F | 1821pF @ 1V, 1MHz |
| Grade | Automotive |
| Qualification | AEC-Q101 |
| Mounting Type | Through Hole |
| Package / Case | TO-220-2 |
| Supplier Device Package | TO-220AC |
| Operating Temperature - Junction | -55°C ~ 175°C |
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Product Attributes
| Packaging | Tube |
| Standard Pack Qty | 1000 |
4,186
Units In Stock
📦 Tube
- 24-hour response
- Global shipping
- Genuine parts guaranteed
Test report available upon request —
view sample report
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Key Specifications
| Category | SiC Schottky Diodes |
| RoHS | RoHS Compliant |
| Lifecycle | New Product |
| Lead Time | 84 Days (from factory) |
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Documentation
Datasheet not available
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Product Overview
Vishay Semiconductors's VS-4C30ET12THM3 is a widely used sic schottky diodes part in electronic designs. It features technology: SiC (Silicon Carbide) Schottky, voltage, DC reverse (vr): 1200 V, current, average rectified: 30A, voltage, forward (vf) (max) @ if: 1.5 V @ 30 A, speed: Zero Recovery Time > 500mA (Io) and reverse recovery time: 0 ns. This part has a typical lead time of 84 Days from factory. Simplytronix supplies VS-4C30ET12THM3 with same-day shipping and guaranteed authenticity.
