*For representation only.
IRF9610STRRPBF
| Mfr. No: | IRF9610STRRPBF |
| Mfr.: | Vishay / Siliconix |
| Category: | MOSFETs |
| Description: | MOSFETs TO263 200V 1.8A N-CH MOSFET |
| Lifecycle: | Active |
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Specifications
| FET Type | P-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 200 V |
| Current - Continuous Drain (Id) @ 25°C | 1.8A (Tc) |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Rds On (Max) @ Id, Vgs | 3Ohm @ 900mA, 10V |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Gate Charge (Qg) (Max) @ Vgs | 11 nC @ 10 V |
| Vgs (Max) | ±20V |
| Input Capacitance (Ciss) (Max) @ Vds | 170 pF @ 25 V |
| FET Feature | - |
| Power Dissipation (Max) | 3W (Ta), 20W (Tc) |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Grade | - |
| Qualification | - |
| Mounting Type | Surface Mount |
| Supplier Device Package | TO-263 (D2PAK) |
| Package / Case | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB |
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Product Attributes
| Packaging | Reel |
| Standard Pack Qty | 800 |
8,174
Units In Stock
📦 Reel
- 24-hour response
- Global shipping
- Genuine parts guaranteed
Test report available upon request —
view sample report
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Key Specifications
| Category | MOSFETs |
| RoHS | RoHS Compliant |
| Lifecycle | |
| Lead Time | 0 Days (from factory) |
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Documentation
Datasheet not available
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Compliance & Export
| Country / Standard | Code |
|---|---|
| CNHTS | 8541290000 |
| USHTS | 8541290065 |
| TARIC | 8541290000 |
| ECCN | EAR99 |
ℹ
Product Overview
As a mosfets component, the IRF9610STRRPBF is manufactured and supplied by Vishay / Siliconix. Among its key specs are FET type: P-Channel, technology: MOSFET (Metal Oxide), drain to source voltage: 200 V, current, continuous drain (id) @ 25°C: 1.8A (Tc), drive voltage: 10V and rds on (max) @ id, vgs: 3Ohm @ 900mA, 10V. This part has a typical lead time of 0 Days from factory. Simplytronix carries IRF9610STRRPBF in stock, backed by a genuine parts guarantee and quick dispatch.
