| Mfr. No: | SI3474DV-T1-BE3 |
| Mfr.: | Vishay / Siliconix |
| Category: | MOSFETs |
| Description: | MOSFETs TSOP6 100V 3.8A N-CH MOSFET |
| Datasheet: | SI3474DV-T1-BE3 Datasheet (PDF) |
| FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 100 V |
| Current - Continuous Drain (Id) @ 25°C | 2.8A (Ta), 3.8A (Tc) |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Rds On (Max) @ Id, Vgs | 126mOhm @ 2A, 10V |
| Vgs(th) (Max) @ Id | 3V @ 250µA |
| Gate Charge (Qg) (Max) @ Vgs | 10.4 nC @ 10 V |
| Vgs (Max) | ±20V |
| Input Capacitance (Ciss) (Max) @ Vds | 196 pF @ 50 V |
| FET Feature | - |
| Power Dissipation (Max) | 2W (Ta), 3.6W (Tc) |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Grade | - |
| Qualification | - |
| Mounting Type | Surface Mount |
| Supplier Device Package | 6-TSOP |
| Package / Case | SOT-23-6 Thin, TSOT-23-6 |
| Packaging | Reel |
| Standard Pack Qty | 3000 |
| Alternate Packaging | SI3474DV-T1-GE3 |
| Suggested Replacement |
| Category | MOSFETs |
| RoHS | RoHS Compliant |
| Lifecycle | |
| Lead Time | 0 Days (from factory) |
| Country / Standard | Code |
|---|---|
| CNHTS | 8541290000 |
| USHTS | 8541290065 |
| TARIC | 8541290000 |
| ECCN | EAR99 |
SI3474DV-T1-BE3 is a mosfets part produced by Vishay / Siliconix for use across a range of applications. Key specifications include FET type: N-Channel, technology: MOSFET (Metal Oxide), drain to source voltage: 100 V, current, continuous drain (id) @ 25°C: 2.8A (Ta), 3.8A (Tc), drive voltage: 4.5V, 10V and rds on (max) @ id, vgs: 126mOhm @ 2A, 10V. This part has a typical lead time of 0 Days from factory and ships with a full manufacturer datasheet available for download. Order SI3474DV-T1-BE3 from Simplytronix for authenticated stock and same-day order processing.