*For representation only.
SI4386DY-T1-GE3
| Mfr. No: | SI4386DY-T1-GE3 |
| Mfr.: | Vishay / Siliconix |
| Category: | MOSFETs |
| Description: | MOSFETs 30V 16A 3.1W 7.0mohm @ 10V |
| Lifecycle: | Active |
⚙
Specifications
| FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 30 V |
| Current - Continuous Drain (Id) @ 25°C | 11A (Ta) |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Rds On (Max) @ Id, Vgs | 7mOhm @ 16A, 10V |
| Vgs(th) (Max) @ Id | 2.5V @ 250µA |
| Gate Charge (Qg) (Max) @ Vgs | 18 nC @ 4.5 V |
| Vgs (Max) | ±20V |
| FET Feature | - |
| Power Dissipation (Max) | 1.47W (Ta) |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Grade | - |
| Qualification | - |
| Mounting Type | Surface Mount |
| Supplier Device Package | 8-SOIC |
| Package / Case | 8-SOIC (0.154", 3.90mm Width) |
📦
Product Attributes
| Packaging | Reel |
| Standard Pack Qty | 2500 |
6,702
Units In Stock
📦 Reel
- 24-hour response
- Global shipping
- Genuine parts guaranteed
Test report available upon request —
view sample report
🔑
Key Specifications
| Category | MOSFETs |
| RoHS | |
| Lifecycle | |
| Lead Time | 0 Days (from factory) |
📄
Documentation
Datasheet not available
🌐
Compliance & Export
| Country / Standard | Code |
|---|---|
| CNHTS | 8541290000 |
| TARIC | 8541290000 |
| CAHTS | 8541290000 |
| USHTS | 8541290065 |
| JPHTS | 854129000 |
| KRHTS | 8541299000 |
| MXHTS | 8541299900 |
| ECCN | EAR99 |
ℹ
Product Overview
The SI4386DY-T1-GE3 from Vishay / Siliconix falls under the mosfets category. This part is specified with FET type: N-Channel, technology: MOSFET (Metal Oxide), drain to source voltage: 30 V, current, continuous drain (id) @ 25°C: 11A (Ta), drive voltage: 4.5V, 10V and rds on (max) @ id, vgs: 7mOhm @ 16A, 10V. This part has a typical lead time of 0 Days from factory. SI4386DY-T1-GE3 is available through Simplytronix, sourced and verified for authenticity.
