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SI4946CDY-T1-GE3 Vishay / Siliconix
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SI4946CDY-T1-GE3

Mfr. No: SI4946CDY-T1-GE3
Mfr.: Vishay / Siliconix
Category: MOSFETs
Description: MOSFETs 60V Vds 20V Vgs SO-8
Lifecycle: Active
Datasheet: SI4946CDY-T1-GE3 Datasheet (PDF)
⚙ Specifications
Technology MOSFET (Metal Oxide)
Configuration 2 N-Channel (Dual)
FET Feature -
Drain to Source Voltage (Vdss) 60V
Current - Continuous Drain (Id) @ 25°C 5.2A (Ta), 6.1A (Tc)
Rds On (Max) @ Id, Vgs 40.9mOhm @ 5.2A, 10V
Vgs(th) (Max) @ Id 3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 10nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds 350pF @ 30V
Power - Max 2W (Ta), 2.8W (Tc)
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Package / Case 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package 8-SO
📦 Product Attributes
Packaging Reel
Standard Pack Qty 2500
🔁 Alternate / Replacement Parts
Alternate Packaging
Suggested Replacement
6,806
Units In Stock
📦 Reel
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🔑 Key Specifications
Category MOSFETs
RoHS RoHS Compliant
Lifecycle
Lead Time 236 Days (from factory)
📄 Documentation
⬇ Download Datasheet
🌐 Compliance & Export
Country / Standard Code
CNHTS 8541290000
TARIC 8541290000
CAHTS 8541290000
USHTS 8541290065
JPHTS 8541290100
KRHTS 8541299000
MXHTS 8541100101
ECCN EAR99
ℹ Product Overview

SI4946CDY-T1-GE3 is a mosfets component manufactured by Vishay / Siliconix. This part is specified with technology: MOSFET (Metal Oxide), configuration: 2 N-Channel (Dual), FET feature: -, drain to source voltage: 60V, current, continuous drain (id) @ 25°C: 5.2A (Ta), 6.1A (Tc) and rds on (max) @ id, vgs: 40.9mOhm @ 5.2A, 10V. This part has a typical lead time of 236 Days from factory and ships with a full manufacturer datasheet available for download. Simplytronix offers SI4946CDY-T1-GE3 in stock, verified authentic and ready for same-day dispatch.

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