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SI6423ADQ-T1-GE3 Vishay / Siliconix
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SI6423ADQ-T1-GE3

Mfr. No: SI6423ADQ-T1-GE3
Mfr.: Vishay / Siliconix
Category: MOSFETs
Description: MOSFETs TSSOP8 P-CH 20V 10.3A
Lifecycle: Last Time Buy
⚙ Specifications
FET Type P-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 20 V
Current - Continuous Drain (Id) @ 25°C 10.3A (Ta), 12.5A (Tc)
Rds On (Max) @ Id, Vgs 9.8mOhm @ 10A, 4.5V
Vgs(th) (Max) @ Id 1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 168 nC @ 8 V
Vgs (Max) ±8V
Input Capacitance (Ciss) (Max) @ Vds 5875 pF @ 10 V
FET Feature -
Power Dissipation (Max) 1.5W (Ta), 2.2W (Tc)
Operating Temperature -55°C ~ 150°C (TJ)
Grade -
Qualification -
Mounting Type Surface Mount
Supplier Device Package 8-TSSOP
Package / Case 8-TSSOP (0.173", 4.40mm Width)
📦 Product Attributes
Packaging Reel
Standard Pack Qty 3000
🔁 Alternate / Replacement Parts
Alternate Packaging
Suggested Replacement
7,415
Units In Stock
📦 Reel
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🔑 Key Specifications
Category MOSFETs
RoHS RoHS Compliant
Lifecycle End of Life
Lead Time 378 Days (from factory)
📄 Documentation
Datasheet not available
🌐 Compliance & Export
Country / Standard Code
CNHTS 8541290000
USHTS 8541290065
TARIC 8541290000
ECCN EAR99
ℹ Product Overview

SI6423ADQ-T1-GE3 is a mosfets part produced by Vishay / Siliconix for use across a range of applications. Among its key specs are FET type: P-Channel, technology: MOSFET (Metal Oxide), drain to source voltage: 20 V, current, continuous drain (id) @ 25°C: 10.3A (Ta), 12.5A (Tc), rds on (max) @ id, vgs: 9.8mOhm @ 10A, 4.5V and vgs(th) (max) @ id: 1V @ 250µA. This part has a typical lead time of 378 Days from factory. Order SI6423ADQ-T1-GE3 from Simplytronix for authenticated stock and same-day order processing.

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