| Mfr. No: | SIA938DJT-T1-GE3 |
| Mfr.: | Vishay / Siliconix |
| Category: | MOSFETs |
| Description: | MOSFETs SC70 2NCH 20V 4.5A |
| Lifecycle: | Active |
| Technology | MOSFET (Metal Oxide) |
| Configuration | 2 N-Channel (Dual) |
| Drain to Source Voltage (Vdss) | 20V |
| Current - Continuous Drain (Id) @ 25°C | 4.5A (Ta), 4.5A (Tc) |
| Rds On (Max) @ Id, Vgs | 21.5mOhm @ 5A, 10V |
| Vgs(th) (Max) @ Id | 1.5V @ 250µA |
| Gate Charge (Qg) (Max) @ Vgs | 11.5nC @ 10V |
| Input Capacitance (Ciss) (Max) @ Vds | 425pF @ 10V |
| Power - Max | 1.9W (Ta), 7.8W (Tc) |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Mounting Type | Surface Mount |
| Package / Case | PowerPAK® SC-70-6 Dual |
| Supplier Device Package | PowerPAK® SC-70-6 Dual |
| Packaging | Reel |
| Standard Pack Qty | 3000 |
| Category | MOSFETs |
| RoHS | RoHS Compliant By Exemption |
| Lifecycle | |
| Lead Time | 0 Days (from factory) |
| Country / Standard | Code |
|---|---|
| CNHTS | 8541290000 |
| TARIC | 8541290000 |
| USHTS | 8541290065 |
| ECCN | EAR99 |
Vishay / Siliconix manufactures the SIA938DJT-T1-GE3, a mosfets part used in electronic assemblies. Notable characteristics of this part include technology: MOSFET (Metal Oxide), configuration: 2 N-Channel (Dual), drain to source voltage: 20V, current, continuous drain (id) @ 25°C: 4.5A (Ta), 4.5A (Tc), rds on (max) @ id, vgs: 21.5mOhm @ 5A, 10V and vgs(th) (max) @ id: 1.5V @ 250µA. This part has a typical lead time of 0 Days from factory. You can source SIA938DJT-T1-GE3 through Simplytronix, with fast shipping and verified authenticity.