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SIHU3N50DA-GE3 Vishay / Siliconix
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SIHU3N50DA-GE3

Mfr. No: SIHU3N50DA-GE3
Mfr.: Vishay / Siliconix
Category: MOSFETs
Description: MOSFETs 500V Vds 30V Vgs IPAK (TO-251)
Lifecycle: Obsolete
⚙ Specifications
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 500 V
Current - Continuous Drain (Id) @ 25°C 3A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 3.2Ohm @ 1.5A, 10V
Vgs(th) (Max) @ Id 4.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 12 nC @ 10 V
Vgs (Max) ±30V
Input Capacitance (Ciss) (Max) @ Vds 177 pF @ 100 V
FET Feature -
Power Dissipation (Max) 69W (Tc)
Operating Temperature -55°C ~ 150°C (TJ)
Grade -
Qualification -
Mounting Type Through Hole
Supplier Device Package IPAK (TO-251)
Package / Case TO-251-3 Long Leads, IPak, TO-251AB
📦 Product Attributes
Packaging Tube
Standard Pack Qty 3000
🔁 Alternate / Replacement Parts
Alternate Packaging
Suggested Replacement IRFR420APBF
14,990
Units In Stock
📦 Tube
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🔑 Key Specifications
Category MOSFETs
RoHS RoHS Compliant
Lifecycle End of Life
Lead Time 0 Days (from factory)
📄 Documentation
Datasheet not available
🌐 Compliance & Export
Country / Standard Code
CNHTS 8541290000
CAHTS 8541100090
USHTS 8541290065
JPHTS 854110090
KRHTS 8541109000
TARIC 8541290000
MXHTS 8541100101
ECCN EAR99
ℹ Product Overview

The SIHU3N50DA-GE3 from Vishay / Siliconix falls under the mosfets category. Its datasheet lists FET type: N-Channel, technology: MOSFET (Metal Oxide), drain to source voltage: 500 V, current, continuous drain (id) @ 25°C: 3A (Tc), drive voltage: 10V and rds on (max) @ id, vgs: 3.2Ohm @ 1.5A, 10V. This part has a typical lead time of 0 Days from factory. SIHU3N50DA-GE3 is available through Simplytronix, sourced and verified for authenticity.

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