| Mfr. No: | SIHU3N50DA-GE3 |
| Mfr.: | Vishay / Siliconix |
| Category: | MOSFETs |
| Description: | MOSFETs 500V Vds 30V Vgs IPAK (TO-251) |
| Lifecycle: | Obsolete |
| FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 500 V |
| Current - Continuous Drain (Id) @ 25°C | 3A (Tc) |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Rds On (Max) @ Id, Vgs | 3.2Ohm @ 1.5A, 10V |
| Vgs(th) (Max) @ Id | 4.5V @ 250µA |
| Gate Charge (Qg) (Max) @ Vgs | 12 nC @ 10 V |
| Vgs (Max) | ±30V |
| Input Capacitance (Ciss) (Max) @ Vds | 177 pF @ 100 V |
| FET Feature | - |
| Power Dissipation (Max) | 69W (Tc) |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Grade | - |
| Qualification | - |
| Mounting Type | Through Hole |
| Supplier Device Package | IPAK (TO-251) |
| Package / Case | TO-251-3 Long Leads, IPak, TO-251AB |
| Packaging | Tube |
| Standard Pack Qty | 3000 |
| Alternate Packaging | |
| Suggested Replacement | IRFR420APBF |
| Category | MOSFETs |
| RoHS | RoHS Compliant |
| Lifecycle | End of Life |
| Lead Time | 0 Days (from factory) |
| Country / Standard | Code |
|---|---|
| CNHTS | 8541290000 |
| CAHTS | 8541100090 |
| USHTS | 8541290065 |
| JPHTS | 854110090 |
| KRHTS | 8541109000 |
| TARIC | 8541290000 |
| MXHTS | 8541100101 |
| ECCN | EAR99 |
The SIHU3N50DA-GE3 from Vishay / Siliconix falls under the mosfets category. Its datasheet lists FET type: N-Channel, technology: MOSFET (Metal Oxide), drain to source voltage: 500 V, current, continuous drain (id) @ 25°C: 3A (Tc), drive voltage: 10V and rds on (max) @ id, vgs: 3.2Ohm @ 1.5A, 10V. This part has a typical lead time of 0 Days from factory. SIHU3N50DA-GE3 is available through Simplytronix, sourced and verified for authenticity.