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SIR5607DP-T1-UE3 Vishay / Siliconix
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SIR5607DP-T1-UE3

Mfr. No: SIR5607DP-T1-UE3
Mfr.: Vishay / Siliconix
Category: MOSFETs
Description: MOSFETs P-CHANNEL 60-V (D-S) MOSFET
Datasheet: SIR5607DP-T1-UE3 Datasheet (PDF)
⚙ Specifications
FET Type P-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 60 V
Current - Continuous Drain (Id) @ 25°C 22.2A (Ta), 90.9A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Rds On (Max) @ Id, Vgs 7mOhm @ 20A, 10V
Vgs(th) (Max) @ Id 2.6V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 112 nC @ 10 V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 5020 pF @ 30 V
FET Feature -
Power Dissipation (Max) 6.25W (Ta), 104W (Tc)
Operating Temperature -55°C ~ 150°C (TJ)
Grade -
Qualification -
Mounting Type Surface Mount
Supplier Device Package PowerPAK® SO-8
Package / Case PowerPAK® SO-8
📦 Product Attributes
Packaging Reel
Standard Pack Qty 3000
🔁 Alternate / Replacement Parts
Alternate Packaging
Suggested Replacement
11,104
Units In Stock
📦 Reel
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🔑 Key Specifications
Category MOSFETs
RoHS RoHS Compliant
Lifecycle
Lead Time 54 Days (from factory)
📄 Documentation
⬇ Download Datasheet
🌐 Compliance & Export
Country / Standard Code
CNHTS 8541290000
CAHTS 8541290000
USHTS 8541290065
JPHTS 854129000
TARIC 8541290000
MXHTS 8541299900
ECCN EAR99
ℹ Product Overview

Vishay / Siliconix manufactures the SIR5607DP-T1-UE3, a mosfets part used in electronic assemblies. Its datasheet lists FET type: P-Channel, technology: MOSFET (Metal Oxide), drain to source voltage: 60 V, current, continuous drain (id) @ 25°C: 22.2A (Ta), 90.9A (Tc), drive voltage: 4.5V, 10V and rds on (max) @ id, vgs: 7mOhm @ 20A, 10V. This part has a typical lead time of 54 Days from factory and ships with a full manufacturer datasheet available for download. You can source SIR5607DP-T1-UE3 through Simplytronix, with fast shipping and verified authenticity.

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